Reference wafer calibration reticle

ABSTRACT

An apparatus and method for manufacturing and using a calibrated registration reference wafer in a semiconductor manufacturing facility where an archive media includes etched alignment attributes. Exposing a pattern of complementary alignment attributes onto the archive media such that the pattern of complementary alignment attributes overlay and interlock with the etched alignment attributes thereby forming completed alignment attributes. Then, measuring offsets in the completed alignment attributes and constructing a calibration file for the archive media based upon the offset measurements and other characteristic data of the exposure tool.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.11/371,514 filed on Mar. 8, 2006 now U.S. Pat. No. 7,261,983, which is acontinuation-in-part of U.S. application Ser. No. 10/765,223 filed Jan.26, 2004, now U.S. Pat. No. 7,160,657 which is a divisional applicationof U.S. application Ser. No. 10/020,569 filed Dec. 7, 2001, now U.S.Pat. No. 6,699,627 all of which claim priority to U.S. ProvisionalApplication No. 60/254,315 filed Dec. 8, 2000; U.S. ProvisionalApplication No. 60/254,271 filed Dec. 8, 2000 and U.S. ProvisionalApplication Ser. No. 60/254,413 filed Dec. 8, 2000, all of which areincorporated by reference in their entirety herein.

BACKGROUND

1. Field of the Invention

The present invention relates generally to processes for semiconductormanufacture and more particularly to semiconductor pattern overlay.

2. Description of Related Art

Lithographic processing is increasingly requiring ever tighterlayer-to-layer overlay tolerances to meet device performancerequirements. Overlay registration on critical layers can directlyimpact device performance, yield and repeatability. Increasing devicedensities, decreasing device feature sizes and greater overall devicesize conspire to make pattern overlay one of the most importantperformance issues during the semiconductor manufacturing process. Theability to accurately determine correctable and uncorrectable patternplacement error depends on fundamental techniques and algorithms used tocalculate lens distortion, stage error, and reticle error.

Overlay registration generally refers to translational error that existsbetween features exposed layer to layer in a vertical fabricationprocess of semiconductor devices on silicon wafers. Other names foroverlay registration include, registration error and pattern placementerror. A typical microelectronic device or circuit may consist of 20-30levels or pattern layers. The placement of patterned features on otherlevels must match the placement of corresponding features on otherlevels, commonly referred to as overlap, within an accuracy which issome fraction of the minimum feature size or critical dimension (CD).

Overlay error is typically, although not exclusively, measured with anoptical overlay metrology tool. See Semiconductor Pattern Overlay, N.Sullivan, SPIE Critical Reviews Vol. CR52, 160:188 1997; Accuracy ofOverlay Measurements: Tool and Mark Asymmetry Effects, A. Starikov etal., Optical Engineering, 1298:1309, 1992; KLA 5105 Overlay Brochure,KLA-Tencor; KLA 5200 Overlay Brochure, KLA Tencor; Quaestor Q7Brochures, Bio-rad Semiconductor Systems. Lithographers have crafted avariety of analysis techniques that attempt to separate out systematicprocess induced overlay error from random process induced error using avariety of statistical methods. See A Computer Aided EngineeringWorkstation for Registration Control, E. McFadden, C. Ausschnitt, SPIEVol. 1087, 255:266, 1989; A “Golden Standard” Wafer Design for OpticalStepper Characterization, K. Kemp, C. King, W. Wu, C. Stager, SPIE Vol.1464, 260:266, 1991; Matching Performance for Multiple Wafer Steppersusing an Advanced Metrology Procedure, M. Van den Brink et al., SPIEVol. 921, 180:197, 1988; Characterizing Overlay Registration ofConcentric 5× and 1× Stepper Exposure Fields Using Interfield Data, F.Goodwin, J. Pellegrini, SPIE Vol. 3050, 407:417, 1997; Super SparseOverlay Sampling Plans: An Evaluation of Methods and Algorithms forOptimizing Overlay Quality Control and Metrology Tool Throughput, J.Pellegrini, SPIE Vol. 3677, 72:82, 1999.

The importance of overlay error and its impact to yield can be foundelsewhere. See Measuring Fab Overlay Programs, R. Martin, X. Chen, I.Goldberger, SPIE Conference on Metrology, Inspection, and ProcessControl for Microlithography XIII, 64:71, March 1999; A New Approach toCorrelating Overlay and Yield, M. Preil, J. McCormack, SPIE Conferenceon Metrology, Inspection, and Process Control for Microlithography XIII,208:216, March 1999. Lithographers have created statistical computeralgorithms (for example, Klass II (See Lens Matching and DistortionTesting in a Multi-Stepper, Sub-Micron Environment, A. Yost et al., SPIEVol. 1087, 233:244, 1989) and Monolith (See A Computer Aided EngineeringWorkstation for Registration Control, supra)) that attempt to separateout correctable sources of pattern placement error from non-correctablesources of error. See Analysis of overlay distortion patterns, J.Armitage, J. Kirk, SPIE Vol. 921, 207:221, 1988; Method to Budget andOptimize Total Device Overlay, C. Progler et al., SPIE Vol. 3679,193:207, 1999; and System and Method for Optimizing the Grid andIntrafield Registration of Wafer Patterns, J. Pellegrini, U.S. Pat. No.5,444,538. Overall theoretical reviews of overlay modeling can be foundin See Semiconductor Pattern Overlay, supra; Machine Models andRegistration, T. Zavecz, SPIE Critical Reviews Vol. CR52, 134:159.

Typically, most overlay measurements are made on silicon product wafersafter each lithographic process, prior to final etch. Product waferscannot be etched until the alignment attributes or overlay targetpatterns are properly aligned to the underlying overlay target patterns.Examples of overlay targets are described in Overlay AlignmentMeasurement of Wafers, N. Bareket, U.S. Pat. No. 6,079,256 (at FIG. 1b),Matching Management of Multiple Wafer Steppers Using a Stable standardand a Matching Simulator, M. Van den Brink et al., SPIE Vol. 1087,218:232, 1989; Automated Electrical Measurements of Registration Errorsin Step and Repeat Optical Lithography Systems, T. Hasan et al., IEEETransactions on Electron Devices, Vol. ED-27, No. 12, 2304:2312,December 1980; Method of Measuring Bias and Edge Overlay Error for Sub0.5 Micron Ground Rules, C. Ausschnitt et al., U.S. Pat. No. 5,757,507;Capacitor Circuit Structure for Determining Overlay Error, K. Tzeng etal., U.S. Pat. No. 6,143,621.

Generally, manufacturing facilities rely heavily on exposure toolalignment, wafer stage matching and calibration procedures (See StepperMatching for Optimum Line Performance, T. Dooly, Y. Yang, SPIE Vol.3051, 426:432, 1997; Matching Management of Multiple Wafer SteppersUsing a Stable standard and a Matching Simulator, supra), MatchingPerformance for Multiple Wafer Steppers using an Advanced MetrologyProcedure, supra) to help insure that the stepper or scanner tools arealigning properly; inaccurate overlay modeling algorithms can corruptthe exposure tool calibration procedures and degrade the alignmentaccuracy of the exposure tool system. See Characterizing OverlayRegistration of Concentric 5× and 1× Stepper Exposure Fields UsingInterfield Data, supra.

Over the past 30 years the microelectronics industry has experienceddramatic, and rapid decreases in critical dimension in part due toimproving lithographic imaging systems. See A New Lens for SubmicronLithography and its Consequences for Wafer Stepper Design, J. Biesterboset al., SPIE Vol. 633, Optical Microlithography V, 34:43, 1986; New 0.54Aperture I-Line Wafer Stepper with Field by Field Leveling Combined withGlobal Alignment, M. Van den Brink, B. Katz, S. Wittekoek, SPIE Vol.1463, 709:724, 1991; Step and Scan and Step and Repeat, a TechnologyComparison, M. Van den Brink et al., SPIE Vol. 2726, 734:753; 0.7 NA DUVStep and Scan System for 150 nm Imaging with Improved Overlay, J. V.Schoot, SPIE Vol. 3679, 448:463, 1999. Today, these photolithographicexposure tools or machines are pushed to their performance limits. Asthe critical dimensions of semiconductor devices approach 50 nm theoverlay error requirements will soon approach atomic dimensions. SeeLife Beyond Mix-and-Match: Controlling Sub-0.18 Micron Overlay Errors,T. Zavecz, Semiconductor International, July 2000. To meet the needs ofnext generation device specifications new overlay methodologies need tobe developed. In particular, overlay methodologies that can accuratelyseparate out systematic and random effects and break them intoassignable causes may greatly improve device process yields. See A NewApproach to Correlating Overlay and Yield, supra; Expanding Capabilitiesin Existing Fabs with Lithography Tool-Matching, F. Goodwin et al.,Solid State Technology, 97:106, June 2000; Super Sparse Overlay SamplingPlans: An Evaluation of Methods and Algorithms for Optimizing OverlayQuality Control and Metrology Tool Throughput, supra; Lens Matching andDistortion Testing in a Multi-Stepper, Sub-Micron Environment, supra.

New “mix and match” technologies that can quickly and accurately reducethe registration error through better calibration and cross referencingprocedures are desirable. See Mix-and-Match: A Necessary Choice, R.DeJule, Semiconductor International, 66:76, February 2000.

SUMMARY

In accordance with the invention, a process for manufacturing, using,and maintaining a calibrated registration reference wafer for use insemiconductor manufacturing facilities is described. An embodiment, atechnique of calibrating an archive media; includes an archive mediawhich includes etched alignment attributes. A pattern of complementaryalignment attributes is exposed onto the archive media such that thepattern of complementary alignment attributes overlay and interlock withthe etched alignment attributes thereby forming completed alignmentattributes. Then, offsets in the completed alignment attributes aremeasured and a calibration file for the archive media is constructedbased upon the offset measurements and dynamic intrafield lensdistortion data of a lens used to expose the pattern of complementaryalignment attributes, and calibration error of the complementaryalignment attributes.

Another embodiment of a technique of calibrating an archive mediaincludes an archive media which includes etched alignment attributes. Apattern of a calibration reticle is exposed onto the archive media,wherein the pattern of the calibration reticle includes complementaryalignment attributes. The pattern of the calibration reticle ispositioned such that the pattern of complementary alignment attributesoverlay and interlock with the etched alignment attributes therebyforming interlocking rows and columns of completed alignment attributesbetween adjacent static calibration reticle exposure fields. Then,offsets in the completed alignment attributes are measured and acalibration file for the archive media constructed based upon the offsetmeasurements and intrafield lens distortion data of a lens used toexpose the pattern of complementary alignment attributes, and amanufacturing error data for the calibration reticle.

Still another embodiment of a technique of calibrating an archive mediaincludes an archive media which includes etched alignment attributes. Apattern of a calibration reticle is exposed onto the archive media,wherein the pattern of the calibration reticle includes central overlaygroups and offset overlay groups. The calibration reticle is positionedsuch that the pattern is positioned so that a complementary alignmentattribute of the central overlay group interlocks with an etchedalignment attribute thereby forming a completed alignment attributearchive, and attributes in adjacent exposures of the calibration reticlepattern interlock with complementary alignment attributes of the offsetoverlay groups thereby forming completed alignment attributescalibration. Then, offsets in the completed alignment attribute archiveand completed alignment attribute calibration are measured, and acalibration file for the archive media is constructed based upon theoffset measurements and manufacturing error data for the calibrationreticle.

The exposures in the embodiments can be performed in a static mode or ina dynamic mode. The exposures can be multiple sub-nominal exposures. Forexample, the reticle may be partially transmitting. In addition, theexposures may be performed by a stepper machine, a step and scanmachine, or a two dimensional scanner machine.

The archive media may be a silicon wafer, a flat panel display, areticle, or electronic media. In addition, the embodiments may includeexposing z-height mapping structures onto the archive media.

Also, constructing a calibration file for the archive media may befurther based upon a combined effect of a source and exit pupilnon-telecentricity of a projection imaging tool used in exposing thepattern of the calibration reticle onto the archive media. In addition,constructing a calibration file for the archive media may be furtherbased upon a lens aberration of a projection imaging tool used inexposing the pattern of the calibration reticle onto the archive media.

In addition, the embodiments may include exposing z-height mappingstructures onto the archive media. Also, constructing a calibration filefor the archive media may be further based upon a focus variation of aprojection imaging tool used in exposing the pattern of the calibrationreticle onto the archive media.

A reticle for use in calibrating an archive media may include a patternof complementary alignment attributes that are exposed onto an archivemedia such that the pattern of complementary alignment attributesoverlay and interlock with the etched alignment attributes on thearchive thereby forming completed alignment attributes. Then,measurements of offsets in the completed alignment attributes may beused to construct a calibration file for the archive media based uponthe offset measurements and dynamic intrafield lens distortion data of alens used to expose the pattern of complementary alignment attributes,and calibration error of the complementary alignment attributes.

A calibration reticle for use in calibrating an archive media mayinclude a pattern exposed onto an archive media, wherein the pattern ofthe calibration reticle includes complementary alignment attributes. Thereticle may be positioned such that the pattern of complementaryalignment attributes overlay and interlock etched alignment attributeson the archive media, thereby forming interlocking rows and columns ofcompleted alignment attributes between adjacent static calibrationreticle exposure fields. Measurements of offsets in the completedalignment attributes may be used to construct a calibration file for thearchive media based upon the offset measurements and intrafield lensdistortion data of a lens used to expose the pattern of complementaryalignment attributes, and manufacturing error data for the calibrationreticle.

An embodiment of a technique of manufacturing a reference substrate on aprojection imaging tool includes at least one reticle that includeinterlocking rows and columns of alignment attributes. The reticle isexposed onto a substrate that includes a recording media in a patternsuch that adjacent exposures create a pattern of interlocking alignmentattributes. Then overlay errors of desired alignment attributes aremeasured and positional coordinates of the desired alignment attributesare calculated with respect to intra-field error data and overlayerrors. Then a calibration file associated with the reference substrateis created that records the positional coordinates of the alignmentattributes.

BRIEF DESCRIPTION OF THE DRAWINGS

The features of this invention are believed to be novel and the elementscharacteristic of the invention are set forth with particularity in theappended claims. The figures are for illustration purposes only and arenot drawn to scale. The invention itself, however, both as toorganization and method of operation, may best be understood byreference to the detailed description which follows taken in conjunctionthe accompanying drawings in which:

FIG. 1 is a schematic showing typical overlay patterns or completedalignment attributes.

FIG. 2 is a schematic showing typical optical verniers.

FIG. 3 is a schematic showing a reticle.

FIG. 4 is a schematic showing overlapped male and female target pairs.

FIG. 5A is a schematic showing additional details of the reticle of FIG.3.

FIG. 5B is a schematic showing additional details of FIG. 5A indeveloped positive photoresist.

FIG. 6 is a flowchart of an embodiment for creating reference wafers.

FIG. 7 is a flowchart of another embodiment for creating referencewafers.

FIG. 8 is a flowchart illustrating an application of the referencewafer.

FIG. 9 is a block diagram illustrating common causes of overlay orplacement error.

FIG. 10 is a block diagram showing a photolithographic stepper orscanner system.

FIG. 11A is a schematic showing inter-field and intra-field overlayerror.

FIG. 11B is a schematic showing inter-field yaw error.

FIG. 12 is a schematic showing additional detail of the interlocking offields in X and Y directions on reference wafers.

FIG. 13A is a schematic showing a reference reticle.

FIG. 13B is a schematic showing a reference reticle that includes waferalignment marks.

FIG. 13C is a schematic showing exemplary inner and outer box sizes.

FIG. 14 is a side view of a reference reticle.

FIG. 15 is a schematic showing a further explanation of the componentsof the interlocking array of the reference reticle.

FIG. 16A is a schematic showing a tiled or interlocking schematic of thereference wafer.

FIG. 16B is a plan view showing an interlocking measurement site.

FIG. 16C is a cross sectional view of an interlocking measurement site.

FIG. 17A is a schematic showing typical overlapping regions showing 3box-in-box overlay targets.

FIG. 17B is a schematic showing examples of completed alignmentattributes (box-in-box).

FIG. 18 is a schematic showing an overlay error vector plot.

FIG. 19 is a schematic showing a translation overlay vector plot.

FIG. 20 is a schematic showing a rotation overlay vector plot.

FIG. 21 is a schematic showing overlay measurement notation.

FIG. 22 is a schematic showing an example of a golden wafer.

FIG. 23 is a schematic showing a wafer alignment mark reticle.

FIG. 24 is a schematic showing an inner box reticle.

FIG. 25 is a schematic showing an example of a golden wafer layout.

FIG. 26 is cross sectional view of an inner box.

FIG. 27 is a schematic showing an outer box reticle.

FIG. 28 is a schematic showing additional detail of an outer boxreticle.

FIG. 29 is a schematic showing an example of a golden wafer for overlaymeasurement.

FIG. 30 is a cross section of a box-inbox.

FIG. 31 is a schematic showing inter-field and intra-field indices.

FIG. 32 is a schematic showing a partially exposed field.

FIG. 33 is a schematic showing the operational portions of a completedreference wafer.

FIG. 34 is a block diagram showing an exemplary calibration file for areference wafer.

FIGS. 35A-35F are cross sectional views of a reference wafer.

FIG. 36 is a schematic showing a reference wafer containing waferalignment marks only.

FIG. 37 shows the process flow for creation of an embodiment formanufacture of high accuracy archive wafers.

FIG. 38 shows an embodiment of a layout for an overlay tool specificarchive wafer.

FIG. 39 shows some conventional overlay tool completed alignmentattributes.

FIG. 40 shows an embodiment of a layout for a lithography tool specificarchive wafer.

FIG. 41 shows an embodiment of an alignment attribute reticle, AAR, foruse in exposing regular grid of alignment attributes on archive waferAW.

FIG. 42 shows an embodiment of a wafer alignment reticle (WAR)containing scribe lane and wafer alignment marks (WAM) in four groups.

FIG. 43 shows an embodiment of an archive wafer, AW, with printedalignment attributes (AA) and wafer alignment marks (WAM).

FIG. 44 shows a plan view of portion of an embodiment of a calibrationreticle, CR containing NRX×NRY set of overlay groups on pitch P′.

FIG. 45 shows a plan view and details of OLG of FIG. 44 written on adark field mask; dimensions at reticle.

FIG. 46 shows an embodiment of a calibration exposure on archive waferin the first embodiment (ITECH=1 of Table 1).

FIG. 47 shows an example of a final archive wafer calibration file.

FIG. 48 shows a plan view of calibration reticle for the secondembodiment.

FIG. 49 shows an embodiment of a calibration exposure on archive waferin the second embodiment (ITECH=2).

FIG. 50 shows a plan view of calibration reticle (CR) for a thirdembodiment.

FIG. 51 shows an embodiment of a combined self referenced rectangulargrid and etched alignment attributes, 2×2 section at wafer center.

FIG. 52 shows a plan view of an embodiment of a calibration reticleincluding focusing fiducials for the fifth embodiment.

FIG. 53 shows a cross section through AA of calibration reticle of FIG.52.

FIG. 54 shows a plan view of z-reference group located on separatereticle or possibly on CR of FIG. 52; shroud SH in no way obscures it.

FIG. 55 shows an example of a sample completed alignment attribute andassociated z-height calibration structures.

FIG. 56 shows an exemplary process flow for alternate embodiments formanufacture of high accuracy archive wafers.

DETAILED DESCRIPTION

In accordance with the invention, a process for manufacturing, using,and maintaining a calibrated registration reference wafer for use insemiconductor manufacturing facilities is described. A reference reticleconsisting of, for example, a 2-dimensional array of standard alignmentattributes is exposed in an interlocking field pattern onto aphotoresist coated semiconductor wafer using a photolithographicexposure tool. Following the lithographic development process, theresist patterned wafer is physically etched using standard techniques,thereby creating a permanent record of the alignment attribute exposurepattern. Along the interlocking rows and columns of the resulting wafer,the permanently recorded alignment attributes are measured for placementerror using a conventional overlay metrology tool. The resulting overlayerror data may be used, for example, in a software program, to generatea unique reference wafer calibration file that contains the positions ofall the reference marks (alignment attributes) forming an uninterrupted,regular array across the wafer as well as the wafer alignment marks. Thepositions of these alignment attributes on the reference wafer can bedetermined very accurately, except for the possibility of arbitrarytranslation, rotation, asymmetric scaling and non-orthogonal positionaloffset errors.

The reference wafer and its associated calibration file can be used todetermine the wafer stage registration performance for anyphotolithographic exposure tool. The accuracy and the precision of thecalculated registration error are controlled, in large part, by thenumber of alignment attributes and overlay measurements. In addition,the process can be quickly repeated resulting in multiple referencewafers. Because of the ease of manufacture of this article, eachphotolithographic exposure tool in a semiconductor factory can have itsown unique reference wafer for routine monitoring. Furthermore, themethod of calculating the positional coordinates of the alignmentattributes for the preferred reference wafer are more accurate andprecise as compared to other techniques. The reference wafer, and itsassociated calibration file, may then be used as a calibrated ruler formeasuring registration error induced by any photolithographic exposuretool, independently from a reference machine. Because a conventionaloverlay metrology tool is used for local measurements to extract globalwafer stage and lens distortion, the above described process can beeasily implemented in a semiconductor fabrication facility. Additionalapplications of the resulting calibrated reference wafers include;improved lithographic simulation using conventional optical modelingsoftware, advanced process control in the form of feedback loops thatautomatically adjust the projection lens, reticle stage, and wafer stagefor optimum registration performance.

The reference wafer, or archive wafer, and its associated calibrationfile functions as a “ruler” and it can be used like a traditional“golden wafer” in the sense that an exposure of the reference marks 3302illustrated in FIG. 33, by any lithographic projection tool. Forexample, a set of complementary marks like the outer box 2702,illustrated in FIGS. 27 and 28 or the outer box 1302 and inner box 1304marks illustrated in FIGS. 13A and 13B, result in a box-in-box structureor complete alignment attribute that can be measured with a conventionaloverlay metrology tool. Using the measurements from the overlaymetrology tool and subtracting the corrections provided by the referencewafer calibration file from the overlay measurements, the combination ofthe intra-field and the inter-field errors of a machine can be directlyinterpreted. By accounting for stage distortion and yaw effects duringthe determination of the calibration, the inherent machine-to-machinereference errors of the prior art golden wafer method are effectivelyeliminated. See A “Golden Standard” Wafer Design for Optical StepperCharacterization, supra; Matching Management of Multiple Wafer SteppersUsing a Stable standard and a Matching Simulator, supra.

Improvement in the measurement accuracy reduces the need for crosscalibration between different photolithographic exposure tool sets andallows direct interpretation, after calibration file correction, of theresults of a set of overlay measurements using the reference wafer.Errors in the overlay measurements due to the exposure of the presentmachine and not as due to systematic or random errors associated withthe machine on which the reference wafer was manufactured. The techniquedescribed above can adjust the accuracy by adjusting the number ofalignment attributes or overlay measurements.

A technique in accordance with the present invention includes providinga reticle, exposing a reference wafer in such a way as to create aunique pattern of overlapped interlocking alignment attributes, etchingthe reference wafer, measuring the interlocked alignment attributes, andfinally creating a reference wafer calibration file that permanentlyrecords the positional coordinates of the alignment attributes.Additionally, other embodiments may allow production of a robust set ofreference wafers for manufacturing facilities that use scanners inaddition to steppers. For this case, we minimize the non-repeatablesource of intra-field error associated with the moving scanner stageduring the exposure of the reference wafer by using a special reticleand multiple exposures. By utilizing a high precision overlay metrologytool for local measurements and extracting a global set of calibratedpositional measurements, the metrology error multiplier can be kept nearunity.

FIG. 6 is a flowchart illustrating an embodiment for creating areference wafer. In block 602, a reference reticle, for example thereticle illustrated in FIGS. 13A, 13B, 13C, and 14 containing an arrayof alignment attributes 1302, 1304, 1306 and wafer alignment marks 1308,is loaded into an exposure tools' reticle management system 1002, asillustrated in FIG. 10, and aligned. Wafers possibly laser or otherwisescribed with unique wafer identification codes and possibly coated withvarious thin films are provided. Examples of such thin films on siliconwafers are silicon nitride, silicon dioxide, amorphous silicon, orpolysilicon.

Flow continues to block 604 where the wafer is then coated withphotoresist and loaded into a projection imaging tool or machine andexposed, in block 606, in an overlapping interlocking pattern. Examplesof overlapping interlocking patterns are illustrated in FIGS. 12 and16A. The projection imaging tool may include contact or proximityprinters, steppers, scanners, direct write, e-beam, x-ray, SCALPEL, IPL,or EUV machines. See Direct-Referencing Automatic Two-PointsReticle-to-Wafer Alignment Using a Projection Column Servo System, M.Van den Brink, H. Linders, S. Wittekoek, SPIE Vol. 633, OpticalMicrolithography V, 60:71, 1986; New 0.54 Aperture I-Line Wafer Stepperwith Field by Field Leveling Combined with Global Alignment, supra;Reference U.S. Pat. No. 4,861,148; Micrascan™ III Performance of a ThirdGeneration, Catadioptric Step and Scan Lithographic Tool, D. Cote etal., SPIE Vol. 3051, 806:816, 1997; ArF Step and Scan Exposure Systemfor 0.15 Micron and 0.13 Micron Technology Node, J. Mulkens et al., SPIEConference on Optical Microlithography XII, 506:521, March 1999; 0.7 NADUV Step and Scan System for 150 nm Imaging with Improved Overlay,supra; Optical Lithography—Thirty Years and Three Orders of Magnitude,J. Bruning, SPIE Vol. 3051, 14:27, 1997; Large Area Fine Line Patterningby Scanning Projection Lithography, H. Muller et al., MCM 1994Proceedings, 100:104; Large-Area, High-Throughput, High-ResolutionProjection Imaging System, K. Jain, U.S. Pat. No. 5,285,236 issued Feb.8, 1994; Development of XUV Projection Lithography at 60-80 nm, B.Newnam et al., SPIE Vol. 1671, 419:436, 1992; Mix-and-Match: A NecessaryChoice, supra. In the examples illustrated in FIGS. 12 and 16A, eachexposure field is separated from the previous exposure by a desireddistance such that neighboring fields have their correspondinginterlocking rows or columns overlapped. See Mix-and-Match: A NecessaryChoice, supra. This partially overlapping exposure technique is shown inFIGS. 12 and 16A. Following the exposures of the interlocking array, thewafer alignment marks and their corresponding interlocking rows andcolumns are exposed as separate fields but interlock into the previousexposure set.

Flow then continues to block 608 where, after the final exposure thewafer is removed from the machine and sent through the final few resistdevelopment steps. Next, the wafers are etched and stripped ofphotoresist and possibly overcoated with another layer. This leaves thealignment attributes and wafer alignment marks permanently recorded onthe wafer surfaces. Flow then continues to block 610 where the resultingalignment attributes along the interlocking rows and columns aremeasured for registration, placement or overlay error using an overlaymetrology tool such as a KLA-Tencor model 5200. See KLA 5200 OverlayBrochure, supra; KLA 5105 Overlay Brochure, supra; Quaestor Q7Brochures, supra; Process for Measuring Overlay Misregistration DuringSemiconductor Wafer Fabrication, I. Mazor et al., U.S. Pat. No.5,438,413; Overlay Alignment Measurement of Wafers, supra. FIG. 9 is aschematic illustrating common causes of overlay or placement error forinter-field and intra-field.

Next, in block 612, the intra-field distortion of the projection imagingtool used to create the reference wafer is provided. Flow continues toblock 614 when the resulting data set is entered into a computeralgorithm where a special calibration file containing the positionalcoordinates for each alignment attribute is constructed for thereference wafer. The final articles as created by the present inventionconsist of a reference wafer containing reference marks on a periodicarray interrupted only by wafer alignment marks as illustrated in FIG.33, and a unique calibration file that lists the location of eachreference and wafer alignment mark on the wafer as illustrated in FIG.34. The process described above can be repeated multiple times resultingin numerous individual reference wafers. Once a calibration file is onrecord and the positions of each alignment attribute is known, the wafercan be used as a two dimensional (2-D) rigid ruler to measure theregistration error associated with a given projection imagingtool—similar to the prior art golden wafer techniques. See A “GoldenStandard” Wafer Design for Optical Stepper Characterization, supra.However, the preferred embodiment allows for the direct measurement ofthe overlay error unique to the machine being tested—without referenceto another machine either directly or indirectly.

The effects of overlay error are typically divided into two majorcategories for the purpose of quantifying overlay error and makingprecise exposure adjustments to correct the problem. The first category,referred to as grid or inter-field error, is the positional shift androtation 1110 as illustrated in FIG. 11A, or yaw 115 as illustrated inFIG. 11B, of each exposure pattern, exposure field, or simply field,with reference to the nominal center position of the wafer. These globalor inter-field positional errors may be caused by the wafer stagesubsystem of the photolithographic exposure tool. Overlay modelingalgorithms typically divide grid or inter-field error into varioussub-categories or components the most common of which are translation,rotation, magnification or scale, non-orthogonality, stage distortionand stage rotation. See Matching Performance for Multiple Wafer Steppersusing an Advanced Metrology Procedure, supra.

The second category, intra-field overlay error is the positional offsetof an individual point inside an exposure field referenced to thenominal center of an individual exposure field 1120 in FIG. 11A.Generally, the term “nominal center” means the location of the center ofa perfectly aligned exposure field; operationally this is the (x,y)position where the lithographic projection is commanded to print theexposure field (field). The following four components, each named for aparticular effect, are typically used to describe the sources ofintra-field error: translation, rotation, scale or magnification andlens distortion. Intra-field overlay errors are typically related tolens aberrations, reticle alignment, and dynamic stage errors forscanners. Separation of the overlay error into inter-field andintra-field components is based on the physically distinguishablesources of these errors, lens aberrations, dynamic stage errors, orreticle positioning for intra-field and the wafer stage for inter-field.

A process of creating and maintaining calibrated registration referencewafers that can be used to measure and determine the registration errorassociated with wafer stages and lenses of projection tools isdescribed. The placement of patterned features on subsequent levels mustmatch the placement of corresponding features on previous levels, i.e.overlap, within an accuracy which is typically some fraction of aminimum feature size or critical dimension (CD). Overlay registration isthe localized translational error that exists between features exposedlayer to layer in the vertical manufacturing process of semiconductordevices on silicon wafers. Overlay registration is also referred to asregistration error or pattern placement error.

Inter-field error can be divided into various components of which thesix most commonly used are: translation, rotation, scale,non-orthogonality, wafer stage distortion and stage yaw. See MatchingPerformance for Multiple Wafer Steppers using an Advanced MetrologyProcedure, supra. In order to measure and quantify the overlay errorthat exists between device layers special overlay target patterns may beprinted in designated locations across the wafer at each lithographicprocessing step. If the two patterned layers are perfectly aligned toeach other the overlay target patterns will be aligned with each other.For example if a box-in-box target pattern were used, a centeredbox-in-box structure 2102 as illustrated in FIG. 21 would result. Anypositional offset or misalignment of the box-in-box target pattern 2104is a measure of the overlay error, illustrated in FIG. 21.

FIG. 1 shows a variety of different overlay target patterns. There aremany types of alignment attributes or overlay target patterns, forexample, a box-in-box 102, a frame-in-frame 104, a segmentedframe-in-frame 106, and a multi-segmented frame-in-frame 108 as shown inFIG. 1, optical verniers as shown in FIG. 2, and gratings. Thepositional offset of these different target patterns is measured with acommercial optical overlay metrology tool. In some cases, the overlayerror can be measured using the projection imaging tool's alignmentsystem. See Matching Management of Multiple Wafer Steppers Using aStable standard and a Matching Simulator, supra. Vector displacementplots as illustrated in FIGS. 18, 19 and 20, can be used to give avisual description of the direction and magnitude of overlay error aremathematically separated into different spatial components using avariety of regression routines. For example, an overlay plot 1802illustrated in FIG. 18 includes a translation component 1902,illustrated in FIG. 19, plus a rotation component 2002, illustrated inFIG. 20.

There are many commercial software packages that can be used to modeland statistically determine the intra-field error components for thepurpose of process control and exposure tool set-up. See, for example,(Monolith (See A Computer Aided Engineering Workstation for RegistrationControl, supra), Klass II (Lens Matching and Distortion Testing in aMulti-Stepper, Sub-Micron Environment, supra)). Once determined, theintra-field error components are analyzed and used to adjust calibrationconstants of the wafer handling stage to improve pattern alignment. Inaddition, because different exposure tools are used to produce a givendevice the exposure tools must be matched or fingerprinted and adjustedso that registration errors unique to one tool are removed or minimizedas much as possible. See Mix-and-Match: A Necessary Choice, supra.

Golden Wafers

Finding the relative magnitude of wafer stage placement error, commonlyuses a process of creating and using a “golden wafer”. Using a goldenwafer, the wafer stage placement error can be measured semi-independentof other sources of registration error. Semiconductor manufacturingfacilities typically use the resulting placement error information tomanually or automatically adjust the wafer stage and stepper alignmentsystem in such a way so as to minimize the impact of overlay error. SeeMatching Management of Multiple Wafer Steppers Using a Stable standardand a Matching Simulator, supra; Matching Performance for Multiple WaferSteppers using an Advanced Metrology Procedure, supra.

FIG. 3 shows a typical set of geometrically placed overlay targetpatterns consisting of a matching pair of male 302 and female targets304. The male 302 and female 304 targets may be regularly spaced acrossa wafer stage test reticle 306 as shown in FIG. 3. FIGS. 5A and 5B showadditional detail of the reticle shown in FIG. 3.

It should be noted that typically the chrome target patterns on mostreticles are 4 or 5 times larger as compared with the patterns theyproduce at the image plane, this simply means modern semiconductorprojection imaging tools are reduction systems. Further, (by measuringthe reticle and then applying these corrections) the overlay targetpatterns are placed in nearly perfect geometric positions on the waferstage test reticle. For example, first, a photoresist coated wafer isloaded onto an exposure tool or stepper wafer stage and globallyaligned. Next, the full-field image of the reticle is exposed severaltimes at various positions across the surface of the photoresist coatedwafer as illustrated in FIG. 22. In addition, several wafer alignmentmarks 2202 may also be printed across the wafer using the reticle asillustrated in FIGS. 3 and 22. For example, the full-field of thereticle 306 may consist of an 11 by 11 array of male 302 and female 304targets evenly spaced at pitch p′ 308, across the reticle surface [FIG.3]. The pattern is then sent through the remaining portions of thelithographic patterning process to delineate the resist pattern.Finally, the patterned wafer is etched and the alignment attributes arepermanently recorded in the wafer surface. This permanently etched waferis called a golden wafer.

In general, the golden wafer may be used to extract stage errors on anyphotolithographic exposure tool in the following way. The golden waferis loaded onto the wafer stage in question and aligned into positionusing the previously placed wafer alignment marks 2202 illustrated inFIG. 22. Next, the wafer stage is moved so as to align the reticle 306illustrated in FIG. 3 containing, for example, an 11 by 11 array of maletargets 302 directly on top of the first full-field exposure patterncontaining an 11 by 11 array of female 304 targets resulting inoverlapping targets 402 as illustrated in FIG. 4 [FIGS. 4, 22]. Makingthese overlapping targets involves shifting the wafer onto the smallincrement d/M so male and female targets lie on top of one another. Whenthe stepper has finished the alignment procedure the x,y wafer stagecoordinates and overlay error associated with several male-femaletargets is electronically recorded. This step, align and recordprocedure is repeated across a desired portion of the wafer for eachfull-field 11 by 11 exposure pattern. The electronically recorded targetcoordinates and overlay errors may then be entered into a statisticalmodeling algorithm to calculate the systematic and random components ofinter-field and intra-field overlay error. It is important to note thatthe resulting inter-field or wafer stage overlay error not yield theunique overlay error of the wafer stage in question. Rather, it can onlybe used to report the inter-field or wafer stage overlay error asreferenced to a golden wafer that was produced on another referencemachine. In general, semiconductor manufacturers always rely on somekind of stage matching or cross-referencing technique to calculate therelative wafer stage overlay error.

There are several problems associated with the golden wafer technique.First, as noted above, the technique does not yield the unique waferstage overlay error for the machine in question, it only provides arelative measure of all components. To obtain the relative stage errorbetween two machines, the inter-field errors of each machine aredetermined and then subtracted from each other resulting in an increasein the noise in the stage error determination. Second, the models usedto calculate the systematic inter-field error usually do not account forthe stage error associated with distortion and yaw. These models aretypically limited to translation, rotation, orthogonality and x and yscale errors (See A Computer Aided Engineering Workstation forRegistration Control, supra), higher order errors are ignored orotherwise not taken into account. Relying on golden wafers created on areference machine, results in wafers that are not identical, or haveoverlay deviations from one another even if they are exposed on a singlemachine in a short time to minimize machine instabilities. See MatchingManagement of Multiple Wafer Steppers Using a Stable standard and aMatching Simulator, supra. It would be very desirable to have aninter-field overlay technique that can determine overlay errorindependently from a cross referenced golden wafer. See Mix-and-Match: ANecessary Choice, supra.

Reference Machine

Another technique utilizes a reference machine (projection imaging tool)for measurement of inter-field overlay error (See Matching Performancefor Multiple Wafer Steppers using an Advanced Metrology Procedure,supra; Expanding Capabilities in Existing Fabs with LithographyTool-Matching, supra). The reference machine is typically one that isclosest to the average of all machines in the factory (ExpandingCapabilities in Existing Fabs with Lithography Tool-Matching, supra) ora machine that exhibits long term stability. See Matching Performancefor Multiple Wafer Steppers using an Advanced Metrology Procedure,supra. On the reference machine, a golden wafer is exposed, developedand etched. The golden wafer is exposed using a desired target, forexample, an inner box reticle 2402 as illustrated in FIG. 24 thatcontains a regular array of inner box structures in a regular patterncovering the wafer, such as a 3×3 array 2502 as shown in FIG. 25. Next,wafer alignment marks are exposed using a designated portion of theinner box reticle or a separate reticle containing the wafer alignmentmark 2302 illustrated in FIG. 23. The golden wafer is then typicallyetched and stripped to produce pits 2602 illustrated in FIG. 26corresponding to the inner box locations.

A number of such wafers may be produced and the locations of the innerbox arrays (individual printings of the inner box reticle) thenrepresent the inter-field positions of the reference machine. Next, areticle containing outer box structures 2702 illustrated in FIGS. 27 and28 in the same nominal positions as the inner box reticle (or thepattern required to produce a completed, machine readable alignmentattribute (complementary pattern) ), the outer box reticle, is placed onthe machine to be measured, a completed golden wafer 2504 in FIG. 25 iscoated with photoresist, exposed and developed. The result is adeveloped golden or reference wafer 2902 illustrated in FIG. 29,containing box in box structures that can then be measured on an overlaymetrology tool. FIG. 30 is a cross sectional view of a typicalbox-in-box structure shown in FIG. 29.

The resulting measurements are then typically averaged over each field,for example, in FIG. 29, the twenty-five measurements within each fieldwould be averaged together to produce a net translation (Dxg, Dyg) androtation (Yawg) for each of the nine fields. This averaged data is thenfit to the following set of equations. See Matching of Multiple WaferSteppers for 0.35 Micron Lithography using Advanced OptimizationSchemes, M. Van den Brink et al., SPIE Vol. 1926, 188:207, 1993;Matching Performance for Multiple Wafer Steppers using an AdvancedMetrology Procedure, supra:Dxg=Txg+sxg*xg+(−qg+qog)*yg+D2x*yg ² +Rwx  (Eq 1)Dyg=Tyg+syg*yg+qg*yg+D2y*xg ² +Rwy  (Eq 2)Yawg=Qg+syawg*yg−2*D2y*xg+Rwy  (Eq 3)Where:

Dxg, Dyg, Yawg=x,y, yaw grid errors at grid position xg, yg

xg, yg=grid position=position on wafer with respect to the center ofstage travel

Txg, Tyg=x,y grid translation

sxg, syg=x,y grid scale or magnification error

qg, qog=grid rotation, orthogonality

D2x, D2y=x,y stage bow terms

Rwx, Rwy, RwY=grid residual in the x, y, Yaw direction (we do not tryfitting to these parameters).

The Yaw error (Yawg) is the deviation of the rotation of the projectedfield at a specific point. It results in a difference in field to fieldrotation as a function of placement position (xg, yg) on the wafer. The10 unknown parameters (Txg, Tyg, . . . D2x, D2y) in Equations 1, 2, 3are solved for using least squares techniques. See Numerical Recipes,The Art of Scientific Computing, W. Press et al., Cambridge UniversityPress, 509:520, 1990.

Problems with this technique include the systematic (repeatable) andrandom grid errors on the reference machine (the machine used forcreating the golden wafers) are permanently recorded as half (inner orouter box) of our factory wide metrology standard. The magnitude anddistribution of these errors is entirely unknown. For machine to machinecomparisons of grid errors, the systematic part of the errors cancel outbut the influence of the random or non-repeatable errors remains. To tryand overcome this problem typically, multiple golden or reference wafersare used to improve machine to machine matching results. See MatchingManagement of Multiple Wafer Steppers Using a Stable standard and aMatching Simulator, supra. Furthermore, reference machine instabilitiesover time lead to a drift or error in the factory wide standardrepresented by the reference machine. Yet another problem with thistechnique is that because it utilizes full size projected fields todetermine the inter-field errors, it does not work with partiallyexposed fields 3202 illustrated in FIG. 32. The ability to includepartially exposed fields is important because product wafers typicallycontain multiple die within an exposure field and therefore theinter-field error of partially exposed fields directly affects the edgedie overlay error.

Reference Reticles

FIG. 13A shows a reference reticle 1310 containing an Nx+2 by Ny+2 arrayof overlay targets or box structures used for creating the basicinterlocking array pattern on a substrate. The substrate may bedifferent materials, for example, a silicon wafer, a quartz wafer, aflat panel display, a reticle, a photo-mask, or a mask plate. Thisreticle 1310 creates the basic periodic grid on a wafer with pitch P/M(M is the reduction magnification ratio of the projection imaging tool)and also creates the features that overlap or interlock from field tofield and thereby improve accuracy. FIG. 15 illustrates additionaldetail of the components of the interlocking array. In the middle is anNx×Ny reference mark array 1502 on pitch P. These features become partof the wafer scale P/M grid and include a set of inner boxes 1304 asdetailed in FIG. 13A. On the right side of FIG. 15 is the rightinterlocking column 1504. It consists of an Ny long set of outer boxes1304 detailed in FIG. 13A, at the indicated X and Y positions. Theposition of this column is determined so that the inner boxes in theleft interlocking column 1506 of a subsequent exposure of the reticle,precisely overlap them on the wafer when the interlocking array isstepped and printed an X distance Sx=Nx*P/M at the wafer.

The left interlocking column 1506 includes an Ny long set of inner boxesthat are off pitch (by the amount G) relative to the Nx×Ny referencemark array. The left interlocking column is off pitch (P-G spacing inFIG. 13A), so that an array of reference marks uninterrupted by fieldboundaries can be created and also be able to create a system ofinterlocking columns 1202 as shown in FIG. 12.

FIG. 15 also details the position of the bottom 1508 and top 1510interlocking rows, both of which contain Nx features. Their function andlocation is analogous to the function and position of the left 1506 andright 1504 interlocking columns respectively. The relative Y position ofthe top 1510 and bottom 1508 interlocking rows is determined to overlapthe inner boxes of the bottom interlocking row when the projected fieldis stepped a distance Sy=Ny*P/M at the wafer.

In addition to the reference reticle of FIG. 13A, another referencereticle containing wafer alignment marks is provided as illustrated inFIG. 13B. The description and layout of this reticle is identical to thedescription above, the only difference is that where the wafer alignmentmark of FIG. 13B either covers a reference mark within the Nx×Nyreference array, or where the design rules for the wafer alignment markdictate prescribed featureless areas, this reticle will contain noreference array marks. There will be a wafer alignment mark present ormore typically several wafer alignment marks, one for each tool typeused in the fab. The reticle containing the full interlocking array,FIG. 13A, and any reticles with wafer alignment marks, FIG. 13B, arethen sequentially loaded and aligned on the projection imaging tool(machine) on which we will be manufacturing reference wafers.

FIG. 13C illustrates some typical inner and outer box sizes, for use onan M=4 or 5 stepper or scanner while a typical reticle pitch P=10 mm andoffset G=0.5 mm. For these parameters Nx and Ny may be selected so thatNx=NY=8 thus allowing for the manufacture of reference wafers on eitherstandard field steppers or scanners.

Wafers

As described above in block 604 of FIG. 6, wafers are then provided.These wafers can be, for example, blank silicon or quartz (See MatchingManagement of Multiple Wafer Steppers Using a Stable standard and aMatching Simulator, supra) and may be possibly laser scribed with anappropriate wafer id number for future identification 3304 as shown inFIG. 33. If desired, the silicon reference wafers can be coated with athin film of silicon nitride or silicon dioxide before continuing(quartz wafers would typically be chrome coated). Next, the wafer iscoated with resist and loaded onto the wafer stage of the machine.

Interlocking Reference Mark Exposures

A series of exposures, each containing an Nx+2 by Ny+2 array of boxstructures, is made in an overlapping interlocking pattern. FIGS. 12 and16A are examples of an interlocking pattern. Following the firstexposure, subsequent exposures in the same row are separated by adistance of Sx=Nx*P/M or the distance between the leftmost inner box ofthe projected field and the rightmost outer box of the field. Subsequentexposures in the same column are separated by a distance of Sy=Ny*P/M orthe distance between the inner box at the bottom of the projected fieldand the topmost outer box within the projected field. P is the reticlepitch of reference marks within the Nx×Ny reference mark array as shownin FIG. 15. M is the reduction magnification ratio of the machine. Thisfield placement pattern creates an interlocking array of fields. FIG. 12shows additional detail of the interlocking array and FIG. 16A shows aschematic of the entire resulting wafer.

An example of the final interlocking exposure pattern is shown in FIG.16A. It forms an Nfx×Nfy rectangular array of fields, the only missingfields being those allocated for wafer alignment marks or where a fieldposition is not desired. FIG. 16B is a plan view of an interlockingmeasurement site and FIG. 16C is a cross sectional view of interlockingmeasurement sites of FIG. 16B. FIG. 17A is a diagram showing typicaloverlapping regions of three box-in-box overlay targets. FIG. 17Billustrates a perfectly centered overlay target box measurement site andsign conventions for displacement.

The Nfx×Nfy array can contain partially exposed fields 3302 as shown inFIG. 32, where the entire field is not printed on the wafer. Thesepartial fields are important because the large exposure fields in modemsteppers and scanners allow for multiple product die within a field(such as illustrated in Nikon Lithography Tool Brochures (Japanese),Nikon). Thus partially exposed fields 3202 can print multiple productdie while not exposing the entire field. Because overlay error tends tobe worse near the edges of the wafer, it is beneficial to have referencemarks near the reference wafers' edge (See A New Approach to CorrelatingOverlay and Yield, supra). For the partially exposed field 3202 to beusefully included on the reference wafer, at least two completed oroverlapped box-in-box structures should be present along the partiallyexposed fields' interlocking rows or columns. This facilitatesdetermining the position of the partially exposed field relative to theother fields in the reference wafer.

Wafer Alignment Mark Exposures

Next the reference reticle containing the wafer alignment marks, asshown in FIG. 13B, is loaded into the exposure position on the machine.The wafer alignment marks are exposed in openings in the previouslydefined Nfx×Nfy field array and placed so that its interlocking rows andcolumns interlock or overlap the interlocking rows and columns alreadyplaced with the previous reference reticle. The result is schematicallyshown in FIG. 16A where two wafer alignment marks 1604 suitable for a 0degree wafer orientation have been printed. The left wafer alignmentmark (FIG. 16A, field i=1, j=4) overlaps the previously placed referencereticle array along its top and bottom interlocking rows and along itsright interlocking column while the right wafer alignment mark (FIG.16A, field i=7, j=4) overlaps the previously placed reference reticlearray along its top and bottom interlocking rows and along its leftinterlocking column. Additional (optional) wafer alignment marks 1608suitable for a 90 degree wafer orientation and interlocked into thefield pattern are also shown.

Develop, Etch, Strip

After the last exposure is complete, the wafer is removed from the waferstage and sent through the final resist development steps. Next, thealignment attributes and wafer alignment marks for each reference waferare permanently etched into the reference wafer using a standardsemiconductor etch process. The remaining resist is then stripped. Anadditional overcoating (SiO2 overcoating, for chrome over quartz) ispossibly provided. FIGS. 35A-35F show a variety of vertical crosssections for the resulting reference mark (in this instance an innerbox). The dashed vertical lines are the silicon wafer (or othersubstrate) while the diagonal lines represent a pre or post exposuredeposited or overcoated layer. Thus in the case of a silicon waferprovided before exposure with a silicon dioxide, polysilicon, amorphoussilicon, or silicon nitride coating, the reference marks would have thecross section of FIG. 35C. Other vertical structures are clearlypossible.

Measure Interlocking Rows and Columns

Referring to block 610 of FIG. 6, at this point, the interlocking arrayrow and column overlay target positions are measured. That is, theoverlay errors present in the completed alignment attributes (box-in-boxstructures) present along the interlocking rows and columns (FIG. 12 indetail and FIG. 16A schematically) of the reference wafer are measured.In general, at least two distinct box-in-box overlay targets should bemeasured along each edge (top, bottom interlocking row and left, rightinterlocking column) of the interior fields. Referring to FIG. 16A, afield (i,j) is an interior field if all of its neighboring fieldsinterlocking rows and columns are completely present on the wafer. Forother fields, typically, at least 2 distinct measurements altogetherdistributed amongst its' interlocking rows and columns in theoverlapping regions. Increasing the number of measurements along theinterlocking rows and columns is desirable because this may increase theaccuracy of the resulting calibration file, as shown in FIG. 34, thatcharacterizes the reference wafer. The aforementioned alignmentattributes or box-in-box along the interlocking rows and columns arethen measured on an overlay metrology tool such as a KLA-Tencor model5105 or 5200 (See KLA 5105 Overlay Brochure, supra; KLA 5200 OverlayBrochure, supra) or a Bio-Rad Semiconductor Systems Quaestor Q7. SeeQuaestor Q7 Brochures, supra. The resulting overlay data set is savedand entered into a computer algorithm for analysis and the overlaypositional coordinates of the alignment attributes are computed and thensaved for the subsequent calculation of the calibration file.

Intra-Field Distortion

Referring to block 612 of FIG. 6, the intra-field or within the exposurefield distortion pattern of the machine being used to create thereference wafer is provided. This can come from a variety of sourcessince a number of techniques are available for the determination of theintra-field distortion (dxf, dyf). One technique is described by Smithet al in U.S. Pat. No. 6,573,986 issued on Jun. 3, 2003. This patentdescribes a self referencing technique that can be carried out usingoverlay metrology tools widely available in semiconductor factories andallows for highly accurate determination of the intra-field distortion(dxf, dyf) over a set of grid points to within an x, y translation,rotation, and overall scale or symmetric magnification factor. Anothertechnique is to expose on a photoresist coated wafer, a reticle patterncontaining simple crosses or squares as illustrated in FIG. 24 that arelocated at the desired intra-field grid positions illustrated in FIG.31. The wafer is then developed and the position of the resulting gridof boxes is measured using an absolute metrology tool such as a LeicaLMS2000, Leica IPRO (Leica Microsystem, Wetzlar, Germany, (See Leica LMSIPRO Brochure, Leica), Nikon 51 or Nikon 61 (Nikon, Tokyo, Japan, (SeeMeasuring System XY-5I, K. Kodama et al., SPIE Vol. 2439, 144:155,1995)).

The technique described above is highly accurate but absolute metrologytools are not widely available in semiconductor factories and so ittypically is not used. Yet another technique involves assuming that themachines' inter-field or stage errors are small over the dimensionsoccupied by a single field, then printing a small field where a singleinner box on a reticle is stepped around by the wafer stage to a grid oflocations in the field. Then another reticle containing an array ofcomplementary outer boxes covering the full image field is printed overthe inner boxes and the resulting box-in-box measurements are directlyinterpreted as the intra-field distortion. See A “Golden Standard” WaferDesign for Optical Stepper Characterization, supra. This technique isthe least accurate and least preferred. With all of these techniques,the overall scale or symmetric magnification is determined with agreater or lesser degree of accuracy; more on this below.

Calculate Calibration File

Referring to block 614 of FIG. 6, the reference wafer calibration fileis calculated. This is the step that creates a unique calibration filefor each reference wafer. Because the intra-field errors are known, theycan be combined with the overlay measurements made along theinterlocking rows and columns of the reference wafer to determine thestage or inter-field errors. Then combining the determined stage errorswith the intra-field errors produces the calibration file that containsthe locations of all of the reference marks on a wafer scale periodicgrid (P/M=period) and the positions of the wafer alignment marks. Thestep of determining the inter-field errors uses the techniques describedin Smith et al, U.S. Pat. No. 6,734,971.

The following model may be used in the determination of the stageerrors:

$\begin{matrix}\begin{matrix}{{{BBx}\left( {i,{j;a},T} \right)} = {\begin{bmatrix}{{{dxG}\left( {i,{j + 1}} \right)} + {{dxf}\left( {a,B} \right)} -} \\{{{Qg}\left( {{ij} + 1} \right)}*{{yfn}(B)}}\end{bmatrix} -}} \\{\begin{bmatrix}{{{dxG}\left( {i,j} \right)} + {{dxf}\left( {a,T} \right)} -} \\{{{Qg}({ij})}*{{yfn}(T)}}\end{bmatrix}} \\{= {{{dxG}\left( {i,{j + 1}} \right)} - {{dxG}\left( {i,j} \right)} - {{{Qg}\left( {{ij} + 1} \right)}*}}} \\{{{yfn}(B)} + {{{Qg}\left( {i,j} \right)}*{{yfn}(T)}} + {{dxf}\left( {a,B} \right)} -} \\{{dxf}\left( {a,T} \right)}\end{matrix} & \left( {{Eq}\mspace{20mu} 4} \right) \\\begin{matrix}{{{BBy}\left( {i,{j;a},T} \right)} = {\begin{bmatrix}{{{dyG}\left( {i,{j + 1}} \right)} + {{dyf}\left( {a,B} \right)} +} \\{{{Qg}\left( {i,{j + 1}} \right)}*{{xfn}(a)}}\end{bmatrix} -}} \\{\begin{bmatrix}{{{dyG}\left( {i,j} \right)} + {{dyf}\left( {a,T} \right)} +} \\{{{Qg}({ij})}*{{xfn}(a)}}\end{bmatrix}} \\{= {{{dyG}\left( {i,{j + 1}} \right)} - {{dyG}\left( {i,j} \right)} + {{{Qg}\left( {i,{j + 1}} \right)}*}}} \\{{{xfn}(a)} - {{{Qg}\left( {i,j} \right)}*{{xfn}(a)}} + {{dyf}\left( {a,B} \right)} -} \\{{dyf}\left( {a,T} \right)}\end{matrix} & \left( {{Eq}\mspace{20mu} 5} \right) \\{{{BBx}\left( {i,{j;b},R} \right)} = {\begin{bmatrix}{{{dxG}\left( {{i + 1},j} \right)} + {{dxf}\left( {b,L} \right)} -} \\{{{Qg}\left( {{i + 1},j} \right)}*{{yfn}(b)}}\end{bmatrix} - {\begin{bmatrix}{{{dxG}\left( {i,j} \right)} + {{dxf}\left( {b,R} \right)} -} \\{{{Qg}\left( {i,j} \right)}*{{yfn}(b)}}\end{bmatrix}{{dxG}\left( {{i + 1},j} \right)}} - {{dxG}\left( {i,j} \right)} - {{Qg}\left( {{i + 1},j} \right)*{yfn}(b)} + {{Qg}\left( {i,j} \right)*{yfn}(b)} + {{dxf}\left( {b,L} \right)} - {{dxf}\left( {b,R} \right)}}} & \left( {{Eq}\mspace{20mu} 6} \right) \\{{{BBy}\left( {i,{j;b},R} \right)} = {\begin{bmatrix}{{{dyG}\left( {{i + 1},j} \right)} + {{dyf}\left( {b,L} \right)} +} \\{{{Qg}\left( {{i + 1},j} \right)}*{{xfn}(L)}}\end{bmatrix} - {\begin{bmatrix}{{{dyG}\left( {i,j} \right)} + {{dyf}\left( {b,R} \right)} +} \\{{{Qg}\left( {i,j} \right)}*{{xfn}(R)}}\end{bmatrix}{{dyG}\left( {{i + 1},j} \right)}} - {{dyG}\left( {i,j} \right)} + {{{Qg}\left( {{i + 1},j} \right)}*{{xfn}(L)}} - {{{Qg}\left( {i,j} \right)}*{{xfn}(R)}} + {{dyf}\left( {b,L} \right)} - {{dyf}\left( {b,R} \right)}}} & \left( {{Eq}\mspace{20mu} 7} \right)\end{matrix}$Where:

T, B, R, L=designate the top, bottom, right and left most row or columnwithin each field [see FIG. 31].

(i, j)=field indices [see FIGS. 17A and 31]. i=1: Nfx, j=1:Nfy but notall i, j pairs occur Equations 4-7. If the field or the correspondingmeasurement set (T or R) does not occur then that equation is absent.That is, i labels fields consecutively left to right while j labelsfields consecutively from bottom to top.

(a, b)=intra-field indices or indices corresponding to each feature[FIG. 31], a=1:Nx+2, b=1:Ny+2. That is, a labels features consecutivelyleft to right while b labels features consecutively from bottom to top.

xf(L), xf(R)=x intrafield nominal position of left (a=1), right (a=Nx+2)interlocking columns [FIGS. 15 and 31]. These are known quantities.

yf(T), yf(B)=y intrafield nominal position of the top (b=Ny+2), bottom(b=1) interlocking rows [FIGS. 15 and 31]. These are known quantities.

xfn(a), yfn(b)=(x,y) intrafield nominal position of feature with index(a,b). These are known quantities (see FIG. 15 for relative positions onthe reticle);

BBx, BBy(i,j;a,T)=(x,y) measured overlay errors along the top (b=Ny+2)interlocking row of field (i,j) at column a. Thus, “a” covers the rangea=2:Nx+1 but the actual number of measurements made along this edge isat the user's discretion subject to the availability of a site onpartially exposed fields. See above for the number of measurementsrequired for the purposes of this invention. These are known quantities.

BBx, BBy(i,j;b,R)=(x,y) measured overlay errors along the right (a=Nx+2)edge of field (i,j) at row b. “b” covers the range b=2:Ny+1 but theactual number of measurements made along this edge is at the user'sdiscretion subject to the availability of a site on partially exposedfields. These are known quantities.

dxG(i,j), dyG(ij), Qg(i,j)=inter-field placement errors in x, y, and yawor rotation at field (i,j). These are the error terms that characterizethe wafer stage stepping. These quantities are solved for, to constructthe calibration file.

dxf(b,L), dyf(b,L)=x,y intra-field lens distortions along the leftinterlocking column (a=1) of the field [FIG. 31]. These are knownquantities.

dxf(b,R), dyf(b,R)=x,y intra-field lens distortions along the rightinterlocking column (a=Nx+2) of the field [FIG. 31]. These are knownquantities.

dxf(a,T), dyf(a,T)=x,y intra-field lens distortions along the topinterlocking row (b=Ny+2) of the field [FIG. 31]. These are knownquantities.

dxf(a,B), dyf(a,B)=x,y intra-field lens distortions along the bottominterlocking row (b=1) of the field [FIG. 31]. These are knownquantities.

Thus, all of the quantities in Equations 4-7 are known except theinter-field or grid error (dxG, dyG, Qg)(i,j) which must be solved for.Equations 4-7 are typically over determined in the sense of equationcounting (there are more equations than unknowns) but are still singularin the mathematical sense; the null space of Equations 4-7 has adimension of three. See Numerical Recipes, The Art of ScientificComputing, W. Press et al., Cambridge University Press, 52:64, 1990. Nowit can be mathematically shown that this 3-dimensional null spacecorresponds to our inability to uniquely solve for the inter-field errorto within an overall X or Y translation and an overall rotation. Putdifferently, if error (dxG, dyG, Qg)(i,j)) is a solution to Equations4-7, then (dxG(i,j)+Tx−qg*yG(i,j), dyG(i,j)+Ty+qg*xG(i,j), Qg(i,j)+qg)is also a solution of Equations 4-7 where:

Tx, Ty=arbitrary translation,

qg=arbitrary rotation

(xG,yG)(i,j) is the nominal center position in wafer coordinates offield (i, j).

To uniquely define a solution we can require that the computed solutionhave zero values for these modes. Then:ΣdxG(i,j)=0 no x translation  (Eq 8)ΣdyG(i,j)=0 no y translation  (Eq 9)ΣyG(i,j)*dxG(i,j)−xG(i,j)*dyG(i,j)=0 no rotation  (Eq 10)

Σ denotes summation over all inter-field grid point pairs (i, j) whoseoffsets and yaws are to be determined. Equations 4-7 are typicallysolved using the singular value decomposition to produce the minimumlength solution. See Numerical Recipes, The Art of Scientific Computing,supra. It can be shown that the constraints of Equations 8-10effectively define a unique solution within the null space of Equations4-7, and therefore they can be applied after the minimum length solution(dxGm, dyGm, Qg)(i,j) has been determined.

Using Eq 11-13 below we solve for Tx, Ty, qg:ΣdxGm(i,j)+Tx−qg*yG(i,j)=0  (Eq 11)ΣdyGm(i,j)+Ty+qg*xG(i,j)=0  (Eq 12)ΣyG(ij)*(dxGm(i,j)+Tx−qg*yG(i,j))−xG(i,j)*(dyGm(i,j)+Ty+qg*xG(i,j))  (Eq13)and the inter-field distortion array satisfying Equations 8-10 andEquations 4-7 is:dxG(i,j)=dxGm(i,j)+Tx−qg*yG(i,j)  (Eq 14)dyG(i,j)=dyGm(i,j)+Ty+qg*xG(i,j)  (Eq 15)Qg(i,j)=Qgm(i,j)+qg  (Eq 16)

At this point, having uniquely determined the inter-field distortionarray, we can calculate the reference wafer calibration file. At aminimum, the following four quantities (xG, yG, dx, dy) are recordedinto the wafer calibration file for each feature in the reference arraywhich is on regular pitch P/M and each wafer alignment mark:

(xG, yG)=nominal (x,y) position of feature on the wafer (interfield orgrid coordinates with center of coordinate system at wafer center (x,yaxis in FIG. 33)),

(dx, dy)=offset or error in nominal position of feature on the wafer.The true position of the feature is given by:(Xtrue, Ytrue)=(xG+dx, yG+dy)=true position of feature on wafer.  (Eq17)

The nominal positions (xG, yG) of all features on the wafer are known tous because they are the positions as they would be placed by a perfectprojection imaging system using perfect reference reticles. Thesenumbers are known since both the stepping pattern on the reference waferis known as well as the design of the reference reticles.

The offset errors of a feature located at intra-field index (a,b) withinexposure field (i,j) on the reference wafer the offset error (dx, dy) iscalculated as:dx(a,b;i,j)=dxG(i,j)−Qg(i,j)*xf(a)+dxf(a,b)  (Eq 18)dy(a,b;i,j)=dyG(i,j)+Qg(i,j)*yf(b)+dyf(a,b).  (Eq 19)

All of the quantities on the right hand side of Equations 18 and 19 areknown and therefore (dx, dy) is directly determined. This suffices forthe determination of the offset errors for the reference array onregular pitch P/M (FIG. 33).

For wafer alignment marks, WM, that cover a more extended region or offgrid portion of projection field (i,j) we would use the followingformulas to determine the offset error:dx(WM,i,j)=dxG(i,j)−Qg(i,j)*<xf>(WM)+<dxf>(WM)  (Eq 20)dy(WM,i,j)=dxG(i,j)+Qg(ij)* <yf>(WM)+<dyf>(WM)  (Eq 21)where:

(<xf˜>, <yf>)(WM)=(x,y) center of mass or average position of WM inintra-field coordinates, and

(<dxf>, <dyf>)(WM)=average intra-field distortion of WM. This iscalculated by interpolating the given values for intra-field distortion,(dxf, dyf)(a,b), so that they apply everywhere in the field and thencalculating the area weighted offset of all of the components making WM.Having computed all of the nominal positions and offsets we create afile (FIG. 34) detailing the feature, xG, yG, dx, dy, and possibly otherinformation. This file is uniquely associated with a particularreference wafer (FIG. 33).

Final Articles

The final articles that result from the process of FIG. 6 is a completedreference wafer (FIG. 33) and corresponding calibration file (FIG. 34).Because the reference wafer of FIG. 33 has a wafer scale (covering theentire wafer, not limited to a single exposure field) reference array(pitch=P/M) that is uninterrupted by field boundaries, and the positionof each reference mark and wafer alignment mark is accurately known fromthe calibration file and Equation 17, the article can be used to performstepper and scanner matching without any regard to field size or format.See System and Method for Optimizing the Grid and IntrafieldRegistration of Wafer Patterns, supra; Mix-and-Match: A NecessaryChoice, supra; Expanding Capabilities in Existing Fabs with LithographyTool-Matching, supra. Thus, the interlocking rows and columns of thereference wafer that were vital to the accurate determination ofposition, though they physically remain, are not a concern and do notinterfere with users of the reference wafer; all that is required is thereference wafer and its calibration file.

ALTERNATE EMBODIMENTS

Similar process steps as described above are used except for beingadapted to step and scan tools (scanners) (See OpticalLithography—Thirty Years and Three Orders of Magnitude, supra) byexposing the wafer alignment marks and the interlocking reference arrayswith multiple sub-Eo exposures, and also providing a reticle withreduced transmission. Eo (E-zero) is the minimum exposure dose requiredfor a large (>200 micron at wafer) open area pattern on the reticle tobecome fully developed or cleared (in the case of positive resist). Eodepends on the particular resist and resist development process. Theintra-field error of scanners has an intrinsic non-repeatable component(0.7 NA DUV Step and Scan System for 150 nm Imaging with ImprovedOverlay, supra) whose effect on the manufactured reference wafers isdesired to minimize. Reference reticles, similar to the reticles shownin FIGS. 13A and 13B, may be provided with a partially reflectingdielectric coating either on their non-chrome or possibly chrome coated(machine optical object plane) surface as shown in FIG. 14. For example,a 95% reflecting dielectric coating applied to the reference reticlesmeans that if twenty exposure sequences at a dose of 2*Eo each areperformed the net effect is to expose the wafer with a dose of 2*Eo andto have effectively averaged over as many as twenty exposures. Anadvantage of this technique is that it averages out the non-repeatablepart of the scanner error. Thus, if the reference wafer requires a doseof b*Eo, and we expose at a dose of a*Eo, the overlay reticle has acoating that reflects a fraction R of light incident on it, then thenumber of exposures (N) required to get a dose of b*Eo on the referencewafer is:N=1+floor(b/(a*(I−R))  (Eq 22)and

floor(x)=integer part of the real number x.

As a typical example, exposing at a dose of 1*Eo (a=1), using referencereticles that are 90% reflecting (R=0.90) and requiring a dose on thereference wafers of 2*Eo (b=2) means the number of required exposures is(Equation 22) N=21 resulting in effectively averaging over as many astwenty-one realizations of the intra-field distortion. While thisembodiment has been described with respect to a partially reflectingreticle, there are similar considerations if the overlay reticle isabsorbing or attenuated. An attenuated phase shift mask is well suitedfor this purpose (See The Attenuated Phase Shift Mask, B. Lin, SolidState Technology, Special Series/Advanced Lithography, 35(1): 43-47(1992)) instead of reflecting; all that is required is a reticle with adecreased optical transmission from normal. In general, the reticletypically needs an optical transmission (1-R for a reflective mechanism)of <50% of normal or nominal.

Reference Reticle Fabrication

The reticle plate, as shown in FIGS. 13A, 13B and 14, makes norequirements on the size of the reticle plate, the design of the overlaytargets or alignment attributes or the types of materials used tofabricate it. In cases where it might be necessary to have more waferalignment marks a third or multiple reference reticles might beappropriate. Alternatively, both the interlocking array with referencemarks and the wafer alignment marks could be contained on one and thesame reticle. This is especially practical if the reference wafers areto be manufactured on a scanner using the scanner's static field, thenthere is certainly room on a single reticle for both. Heretofore, wehave considered the reticle creating the patterns as perfect. Inpractice it is, but errors in the reticle manufacture can be taken intoaccount by first measuring the position of all the individual structureson the reference reticle using an absolute metrology tool such as theNikon 51 (See Measuring System XY-5I , supra), or Leica IPRO seriestools. See Leica LMS IPRO Brochure, supra. Next, in formulatingEquations 4-7, this reticle error (divided by the projection imagingtool demagnification (M) ) is explicitly written out on the right handside and then subtracted from the resulting overlay measurements on theleft hand side of the equations (thereby canceling out on the right handside). The result is Equations 4-7 as they are written above but with acorrection applied to the overlay measurements appearing on the lefthand side. This accounts for the reticle error in the determination ofthe inter field grid and yaw distortion (dxG, dyG, Qg). The othercorrection for reticle distortion is directly added to the dx or dy termof Equations 18-21 as the reference reticle error at the feature we areconsidering divided by M.

ADDITIONAL EMBODIMENTS

Thus far, embodiments have been mainly described with respect toalignment attributes that are in the form of a box-in-box orframe-in-frame pattern as shown in FIG. 11A. Other alignment attributessuch as gratings (See Overlay Alignment Measurement of Wafers, supra[FIG. 1 b], wafer alignment marks (See Matching Management of MultipleWafer Steppers Using a Stable standard and a Matching Simulator, supra),van der Pauw resistors (See Automated Electrical Measurements ofRegistration Errors in Step and Repeat Optical Lithography Systems,supra), vernier pairs (See Method of Measuring Bias and Edge OverlayError for Sub 0.5 Micron Ground Rules, supra), or capacitor structures(See Capacitor Circuit Structure for Determining Overlay Error, supra)could be used instead. In general, any alignment attribute that can beused by an overlay metrology tool for measuring offsets can be utilized.

The overlay metrology tool utilized is typically a conventional opticaloverlay tool such as those manufactured by KLA-Tencor (See KLA 5105Overlay Brochure, supra; KLA 5200 Overlay Brochure, supra) or Bio-RadSemiconductor Systems. See Quaestor Q7 Brochures, supra. Other opticaloverlay tools can also be used. See Process for Measuring OverlayMisregistration During Semiconductor Wafer Fabrication, supra or SeeOverlay Alignment Measurement of Wafers, supra. In addition, somesteppers or scanners can utilize their wafer alignment systems and waferstages to function as overlay tools (See Matching Management of MultipleWafer Steppers Using a Stable standard and a Matching Simulator, supra).In general, the total size of the alignment attribute is limited (inthis case consisting of two wafer alignment marks) to a distance overwhich the wafer stage would be as accurate as a conventional opticaloverlay tool. This distance is typically <0.5 mm. When electricalalignment attributes are used for overlay (See Electrical Methods forPrecision Stepper Column Optimization, L. Zych et al., SPIE Vol. 633,98:105, 1986; Automated Electrical Measurements of Registration Errorsin Step and Repeat Optical Lithography Systems, supra, Capacitor CircuitStructure for Determining Overlay Error, supra), the overlay metrologytool would correspond to the electrical equipment utilized for makingthe corresponding measurement.

Thus far, the description has been with respect to manufacture and useof a reference wafer on the projection imaging tools (steppers (SeeDirect-Referencing Automatic Two-Points Reticle-to-Wafer Alignment Usinga Projection Column Servo System, supra; New 0.54 Aperture I-Line WaferStepper with Field by Field Leveling Combined with Global Alignment,supra; Projection Optical System for Use in Precise Copy, T. Sato etal., U.S. Pat. No. 4,861,148 issued Aug. 29, 1989)), and scanners (SeeMicrascan™ III Performance of a Third Generation, Catadioptric Step andScan Lithographic Tool, supra; Step and Scan Exposure System for 0.15Micron and 0.13 Micron Technology Node, supra; 0.7 NA DUV Step and ScanSystem for 150 nm Imaging with Improved Overlay, supra) most commonlyused in semiconductor manufacturing today. However, the articlesdescribed can be manufactured or applied to other projection imagingtools such as contact or proximity printers (See OpticalLithography—Thirty Years and Three Orders of Magnitude, supra),2-dimensional scanners (See Large Area Fine Line Patterning by ScanningProjection Lithography, supra; Large-Area, High-Throughput,High-Resolution Projection Imaging System, supra; OpticalLithography—Thirty Years and Three Orders of Magnitude, supra), officecopy machines, and next generation lithography (ngl) systems such as XUV(See Development of XUV Projection Lithography at 60-80 nm, supra),SCALPEL, EUV (Extreme Ultra Violet) (See Reduction Imaging at 14 nmUsing Multilayer-Coated Optics: Printing of Features Smaller than 0.1Micron, J. Bjorkholm et al., Journal Vacuum Science and Technology, B8(6), 1509:1513, November/December 1990), IPL (Ion ProjectionLithography), and EPL (electron projection lithography). SeeMix-and-Match: A Necessary Choice, supra.

The above description utilized only a single projected wafer alignmentmark. However, multiple types of wafer alignment marks, one for eachtype of tool in the fab we will be analyzing or different angularorientations, See FIG. 33, could be projected to increase the utility ofthe reference wafer. In the case of multiple wafer alignment marks, theprocedure would be modified so that the resulting calibration file wouldcontain the nominal and offset position of all of the projectedalignment marks.

While the above described laying down a series of reference marks on aregular, wafer scale array of pitch P/M, any other pattern that is builtup by interlocking fields along rows and columns can also be used. Thepositions of the resulting features can be measured and recorded in acalibration file that is determined as described above. In particular, awafer could be created that consisted entirely of wafer alignment marksat precisely known positions as illustrated in FIG. 36. Such a referencewafer and its associated calibration file is valuable for assessingprojection imaging tool alignment system performance.

The reference reticle is typically glass with openings defined in achrome coating. This is common for projection lithography tools utilizedin semiconductor manufacture. The form the reticle can take will bedetermined by the format required by the specific projection imagingtool on which the reticle is loaded. Thus, an extreme ultra-violet (XUV)projection system would typically have a reflective reticle. SeeDevelopment of XUV Projection Lithography at 60-80 nm, supra.

The embodiments described above have been mainly described with respectto the recording medium being positive photoresist. Negative photoresistcould equally well have been used providing appropriate adjustment tothe box-in-box structures on the reticle is made. Other types ofrecording medium can also be used, for example, an electronic CCD, adiode array, liquid crystal, or other optically sensitive material. Ingeneral, the recording medium is whatever is typically used on theprojection imaging tool used for manufacturing the reference wafers.Thus, on an EPL tool, an electron beam resist such as PMMA could beutilized as the recording medium.

So far, the substrates on which the recording media is placed have beendescribed as wafers. This will typically be the case in semiconductormanufacture. The exact form of the substrate will be dictated by theprojection imaging tool used for its manufacture and its use in aspecific manufacturing environment. Thus, in a flat panel manufacturingfacility, the reference substrate would be a glass plate or panel.Circuit boards or multi-chip module carriers are other possiblesubstrates.

FIG. 7 is a flow chart illustrating another embodiment for creating areference wafer. In block 702 a reference reticle with reducedtransmission is loaded into an exposure tools' reticle managementsystem. Flow continues to block 704 where the wafer is then coated withphotoresist and loaded into a projection imaging tool or machine. Inblock 706 the wafer is exposed, in an overlapping interlocking pattern,with multiple sub-E0 exposures.

Flow then continues to block 708 where, after the final exposure thewafer is removed from the machine and sent through the final few resistdevelopment steps. Next, the wafers are etched and stripped ofphotoresist and possibly overcoated with another layer. This leaves thealignment attributes and wafer alignment marks permanently recorded onthe wafer surfaces. Flow then continues to block 710 where the resultingalignment attributes along the interlocking rows and columns aremeasured for registration, placement or overlay error.

Next, in block 712, the intra-field distortion of the projection imagingtool used to create the reference wafer is provided. Flow continues toblock 714 when the resulting data set is entered into a computeralgorithm where a special calibration file containing the positionalcoordinates for each alignment attribute is constructed for thereference wafer.

FIG. 8 is a flow diagram of an example of an application of thereference wafer. Flow begins in block 802 and the reference wafer isloaded onto a machine. Flow continues to block 804 where an overlayreticle is loaded and aligned on the machine. Then in block 806 thereference wafer is exposed. In block 810 the wafer is developed and theoverlay targets are measured. In block 812 the references wafercalibration file offsets are subtracted from the measurements. Then, inblock 814 the inter-field or intra-field errors for the new machine arecalculated.

FURTHER EMBODIMENTS

As noted, the overlay or transverse (X, Y) misalignment of one processlayer to another plays a vital role in the economics of semiconductorwafer processing (see, for example, M. Preil et al., “A New Approach toCorrelating Overlay and Yield”, Proc. of SPIE Conference on Metrology,Inspection, and Process Control for Microlithography XIII, pp. 208-216,March 1999; N. Sullivan, “Semiconductor Pattern Overlay”, Proc. of SPIECritical Reviews, Vol. CR52, pp. 160-188; and A. Starikov, “Metrology ofImage Placement”, Handbook of Silicon Semiconductor Metrology, pp.411-475, 2001). Components of overlay error that can be accuratelyassessed include static lens distortion (see, for example, A. Smith etal., “Method and Apparatus for Self-Referenced Projection LensDistortion Mapping”, U.S. Pat. No. 6,573,986), dynamic lens distortion(see, for example, A. Smith et al., “Method and Apparatus forSelf-Referenced Dynamic Step and Scan Intra-Field Lens Distortion”, U.S.Pat. No. 6,906,780), dynamic scan synchronization error (see, forexample, A. Smith et al., “Method and Apparatus for Self-ReferencedDynamic Step and Scan Intra-Field Scanning Distortion”, U.S. Pat. No.6,906,303), static wafer stage grid and yaw (see, for example, A. Smithet al., “Method and Apparatus for Self-Referenced Wafer Stage PositionalError Mapping”, U.S. Pat. No. 6,734,971), dynamic wafer stage grid andyaw (U.S. Pat. No. 6,906,780), reticle stage error (“Method andApparatus for Self-Referenced Dynamic Step and Scan Intra-Field LensDistortion”, U.S. Pat. No. 6,906,303) while net inter- and intra-fieldoverlay error can also be assessed using the technique of U.S. Pat. No.6,734,971 “Method and Apparatus for Self-Referenced Wafer StagePositional Error Mapping”. The aforementioned techniques produceabsolute error maps (to within a few undefined modes) that isolatevarious machine (projection imaging tool, stepper or scanner)subsystems. Sometimes it is desirable to have an accurate or at the veryleast stable standard for transverse positioning that can readilyutilize overlay metrology tools (KLA 5200 Overlay Tool Brochure,KLA-Tencor, 1996 and Quaestor Q7 Brochure, Bio-Rad Systems) or machinewafer alignment systems (see, for example, M. van den Brink et al.,“Matching Management of Multiple Wafer Steppers Using a Stable Standardand a Matching Simulator”, Proc. of SPIE, Vol. 1087, pp. 218-232, 1989).Such a standard (sometimes called an archive, reference, golden, or holywafer) takes the form of an etched or otherwise permanently markedsilicon or SiO2 substrate and possibly a calibration file that lists thedeviations of the etched marks from their nominal positions. An exampleof such a reference wafer that can be manufactured with static fields orby using multiple sub E0 dynamic exposures is given in see, for example,U.S. Pat. No. 6,734,971, supra. This reference wafer is manufacturedusing a special reticle and the associated calibration file derives itsaccuracy from overlapped, completed alignment attributes that arepermanently etched into the reference substrate. The resulting referencearray etched into the reference wafer is a periodic array. Other lessaccurate archive wafers are described in see, for example, K. Kemp etal., “A ‘Golden Standard’ Wafer Design for Optical StepperCharacterization”, Proc. of SPIE, Vol. 1464, pp. 260-266, 1991; and“Matching Management of Multiple Wafer Steppers Using a Stable Standardand a Matching Simulator”, supra.

To the extent that an existing set of archive wafers is already inactive use (see, for example, “A ‘Golden Standard’ Wafer Design forOptical Stepper Characterization”, supra) in the fab, it would beadvantageous to characterize or re-characterize and thus provide a moreaccurate calibration file. It would also be advantageous to have agreater variety of archive substrate manufacturing techniques to suitthe capabilities/constraints of particular fabs.

In one embodiment, an uncalibrated archive substrate is manufactured byexposing an alignment attribute reticle in a regular grid (with possiblymissing sites) and subsequently etching (or possibly depositing in anadditive process) the printed alignment attributes another variation, aseparate wafer alignment reticle (WAR in FIG. 42) is provided thatcontains WAM of multiple types and for multiple tools in strips.Alignment attributes, AA, on AAR are typically measured on a tool suchas see, for example, Leica LMS IPRO Brochure and this information isused in constructing the calibration file (Block 1008).

Next, Block 1002, resist coated archive media is provided. The mediaassumes the form of the lithography tool it will be used on. One of theadvantages of techniques described is the ability of productionfacilities to create their own stable archive media. Thus in asemiconductor fab it will typically be a 200 or 300 mm wafer while in aflat panel display factory it would be a rectangular glass plate.

Then, in Block 1003, the archive media is exposed (either statically ordynamically) with the alignment attributes, AA, on a regular grid andthe wafer alignment marks (WAM) as required. FIG. 43 shows an archivewafer, AW, with alignment attributes, AA, on a regular grid of pitch P.Wafer alignment marks, WAM, are also printed at this time. This exposedwafer (archive media) is then developed and etched so the AA and WAMform permanent structures in the AW. Remaining resist is then stripped.At this point we have an uncalibrated archive wafer of the sortdescribed in see, for example, “A ‘Golden Standard’ Wafer Design forOptical Stepper Characterization”, supra, and “Matching Management ofMultiple Wafer Steppers Using a Stable Standard and a MatchingSimulator”, supra. They are useful for checking for variations over timeand across machines provided the archive wafers do not varysignificantly in AA position from wafer to wafer. The subsequent steps(Blocks 1004 through 1008) in FIG. 37 provide the user with absolutecalibration data for each archive wafer that provide for consistency andan absolute standard over time and across machines.

The exact form the calibration reticle (Block 1004) takes as well assubsequent exposure (Block 1005), metrology (Block 1006), machine data(Block 1007), and calibration file construction (Block 1008) will dependon the specific calibration technique employed. Table 1 lists fivetechniques (indexed by ITECH) for calibrating archive wafers dependingon whether the initial archive wafer exposure made (Block 1003) wasstatic or dynamic.

TABLE 1 Archive Wafer Exposure Mode Calibration Technique (Block 1003)(Blocks 1004-1008) ITECH static or dynamic dynamic, overlapped scantechnique 1 static or dynamic static, field to field overlap technique 2static or dynamic static, interlocked site by site 3 static or dynamicdynamic sub E0 exposures, field to field 4 overlap static or dynamicstatic, field to field overlap technique 5 with z-height corrections

FIRST EMBODIMENT OF CALIBRATION TECHNIQUE

This description is for ITECH=1 of Table 1. Related aspects of thistechnique are described in U.S. patent application Ser. No. 10/252,021,now U.S. Pat. No. 6,906,303, supra which is herein incorporated byreference. Calibration reticle, CR, (Block 1004) is shown in FIG. 44 andoverlay groups, OLG, in more detail in FIG. 45. Pitch P′ on CR isrelated to pitch P of AA on AW (FIG. 43) according to:P′=M*P  (Eq 23)Where M=reduction magnification ratio (usually 4 or 5) of machine usedfor CR exposure (Block 1005). Looking at FIG. 46, the initial etchedarchive wafer, AW, consists of etched alignment attributes (light dottedinner boxes) on pitch P and etched wafer alignment marks suitable foruse at 0° (WAM0) and at 90° notch rotation (WAM90). Etched AW could havebeen produced by either a series of static or dynamic exposures; we donot need to know which machine or other details of its exposure method,we will assess the site by site placement error in this etched archivewafer.

We now coat AW with photoresist, place it in a scanner, M′ (not shown),and carry out the exposure steps detailed in see, for example, U.S. PatNo. 6,906,303, supra. AW is first exposed with calibration reticle CR ofFIG. 44 per the production layout. In this case, the production layoutis the set of exposures (printed fields or PF) that cover the etchedalignment attributes with the complementary alignment attribute (CAA) ofreticle CR. For the example in FIG. 46, this is four dynamically printedfields, PF1, PF2, PF3 and PF4 which are distinguished by the heavydashed dividing line. Light black outline denotes the features exposedduring this step. Scan direction was vertical relative to the page.Next, and following see, for example, U.S. Pat. No. 6,906,303, supra,horizontal cross tie exposures are done bridging the adjacent printedfields in the X-direction. Gray outline indicates these exposures (alsowith vertical scan) and horizontal cross ties, HCT, are thereby formed.Next, see, for example, U.S. Pat. No. 6,906,303, supra, AW is rotated90°, aligned on WAM90 and vertical cross tie exposures are done (atleast two), forming vertical cross columns labeled VCC1, VCC2, VCC3, andVCC4 in FIG. 46. The dotted and heavy black outlined structures are theresult of this exposure set.

Moving to Block 1006, we now measure all of the completed alignmentattributes, COAA. These fall into two groups, the overlay of the CAAfrom the production layout exposure with the etched archive wafer AA(the 156 light black on light dotted COAA of FIG. 46) and the remainingCOAA (124 in FIG. 46) which are associated with this technique. Also,see, for example, U.S. Pat. No. 6,906,303, supra. These lattermeasurements are combined with the dynamic intrafield lens distortion ofmachine M′ which is measured according to techniques, for example, U.S.Pat. No. 6,906,303, supra, to reconstruct the row by row scansynchronization error of the printed fields (PF1, PF2, . . . ).

To construct the archive wafer calibration file we need to go beyondtechniques described in U.S. Pat. No. 6,906,303, supra. Using thecomputed (see, for example, U.S. Pat. No. 6,906,303, supra) row by rowscan error, the provided calibration reticle error, and the provideddynamic intrafield lens distortion error, we can compute the locationsof the complementary alignment attributes put down during the productionlayout exposure (CAAP) as:(ΔX, ΔY)(CAAP, XW, YW)=(tx1(irow, i), ty1(irow, i)+XF(i)*q1(iro,i))+(ΔX, ΔY)(Ret, XF, YF)/M+(ΔX, ΔY)(DL, XF)  (Eq 24)where:

(ΔX, ΔY) (CAAP, XW, YW)=deviation of CAAP located at XW, YW from idealor nominal position

XW, YW=nominal position on wafer

(tx1, ty1, q1) (irow, i)=scan synchronization error for scan row irow,transverse site i in production layout exposure

XF, YF=intrafield coordinate for production layout exposure

(ΔX, ΔY) (Ret, XF, YF)=reticle error at intrafield position XF, YF

M=machine reduction magnification ratio

(ΔX, ΔY) (DL, XF)=dynamic intrafield lens distortion error.

The archive wafer calibration offsets are then computed as:(ΔX, ΔY)(AW, XW, YW)=(BBX, BBY)(CAAP, XW, YW)+(ΔX, ΔY)(CAAP, XW,YW)  (Eq 25)where;

(ΔX, ΔY) (AW, XW, YW)=archive wafer calibration file offsets from ideal(BBX, BBY) (CAAP, XW, YW)=overlay measurements of etched alignmentattributes and production layout exposure.

At this point (Block 1008) we strip the archive wafer of photoresist andcreate the calibration file associated with the wafer, FIG. 47.

SECOND EMBODIMENT OF CALIBRATION TECHNIQUE

This is ITECH=2 of Table 1. Related aspects of this technique aredescribed in, for example, U.S. Pat. No. 6,734,971, supra which isherein incorporated by reference. Calibration reticle CR is as describedin U.S. Pat. No. 6,734,971, supra is as shown in FIG. 48. It consists ofan N×N array of complementary alignment attributes, CAA, with missinglower left corner on regular pitch P′ except for the first row and firstcolumn which is shifted an additional amount G′. Additionally there are2*(N−1) alignment attributes, AA, disposed a distance G′ from the topcolumn and rightmost column. In FIG. 48, N=5. Rectangular arrays arealso possible, see, for example, U.S. Pat. No. 6,734,971, supra. Typicaldimension G′ is as in FIG. 45. P′ is as specified in Equation 23, supra.

Looking at FIG. 49, the initial etched archive wafer AW consists ofetched alignment attributes (light black inner boxes) on pitch P′ andetched wafer alignment marks suitable for use at 0° (WAM0). Etched AWcould have been reproduced by either a series of static or dynamicexposures; we do not need to know which machine or other details of itsexposure method, we will assess the site by site placement error in thisetched archive wafer.

We now coat AW with photoresist, place it in a stepper or scanner instatic mode, M′ (not shown), and carry out the exposure steps detailedin see, for example, U.S. Pat. No. 6,734,971, supra. These exposuresteps consist of exposing an interlocking array of exposure fields usinga special calibration reticle, CR (an example with N=5 is shown in FIG.48) covering each etched alignment attribute, AA, with a complementaryalignment attribute, CAA, thereby forming completed alignmentattributes, archive (COAAR) of which 1 of 140 is pointed out in FIG. 49.As described in, for example, U.S. Pat. No. 6,734,971, supra, during thesame exposure sequence interlocking rows (ILR) and interlocking columns(ILC) are created between adjacent static calibration reticle, CR,exposure fields. Looking at FIG. 49, four static, interlocking CRexposures are required to cover the wafer. The interlocking column, ILC,consists of thirteen completed alignment attributes, calibration (COAAC)of which one is explicitly called out. Likewise, interlocking row, ILRconsists of thirteen COAA made up of inner and outer boxes from adjacentCR exposure fields.

Moving to Block 1006, we now measure all completed alignment attributes,COAA. Again, these fall into two groups, those containing an etchedarchive wafer alignment attribute (COAAAR of which there are 140 in FIG.49) and those required for calibration (COAAC of which there are 26 inFIG. 49).

In Block 1007, we provide per U.S. Pat. No. 6,734,971, supra, the staticlens distortion of machine M′ (the machine carrying out the calibrationreticle exposures). This may be accomplished, for example, using themethod of U.S. Pat. No. 6,573,986, supra.

In Block 1008, we first utilize the COAAC overlay data, themanufacturing error file for calibration reticle CR, the providedintrafield lens distortion data for machine M′, and combine them, forexample, U.S. Pat. No. 6,734,971, supra to produce a map of thepositional offsets as shown in U.S. Pat. No. 6,734,971, supra, FIG. 34and denoted here as: (ΔX, ΔY) (COAAR, XW, YW). The archive wafercalibration offsets are then computed as:(ΔX, ΔY)(AW, XW, YW)=(BBX, BBY)(COAAAR, XW, YW)+(ΔX, ΔY)(COAAAR, XW,YW)  (Eq 26)where;

(BBX, BBY) (COAAAR, XW, YW)=overlay measurement from the etched archivewafer alignment attribute at position XW, YW on the wafer.

At this point (Block 1008) we strip the archive wafer of photoresist andcreate the calibration file associated with the wafer, FIG. 47.

THIRD EMBODIMENT OF CALIBRATION TECHNIQUE

This is ITECH=3 of Table 1. Related aspects of this technique aredescribed in, B. McArthur et al., “Method and Apparatus forSelf-Referenced Wafer Stage Positional Error Mapping”, U.S. PublicationNo. 2004-0162687 which is herein incorporated by reference and forbrevity referenced as, U.S. Publication No. 2004-0162687, supra.Calibration reticle, CR, may be described as, for example, U.S.Publication No. 2004-0162687, supra and also shown in FIG. 50. Itconsists of a 3×3 array of overlay groups of two types. First, a centraloverlay group, COLG, consisting of a 2×2 array of complementaryalignment attributes on pitch G′ (in this drawing they are the outerframes of a frame-in-frame alignment attribute) and two alignmentattributes offset from (XR YR)=(0,0) in the X and Y directions an amountG′. In this instance the alignment attributes are the inner frames of aframe-in-frame pair. Nominal position of the COLG is (XR, YR)=(0,0). Thesecond type of overlay group is the offset overlay groups, OOLG, whichconsist of a single complementary alignment attribute of the same typeas of the 2×2 COLG portion (in this case, the outer frame of aframe-in-frame pair) and alignment attributes offset in X and Ydirections by an amount G′. OOLG are on a pitch P′ relative to COLG andeach other.

Group numbering is present on each overlay group as an aid duringexposure setup. Reticle alignment marks, RAM, will also be present oncalibration reticle, CR. CR as illustrated is a dark field reticle.Thus, the lines representing the overlay groups are interpreted asopenings in chrome. A typical dimension G′ is as in FIG. 45. P′ is asspecified in Equation 23, supra.

FIG. 51 shows a portion of the initial etched archive wafer alignmentattributes (heavy gray inner boxes) on pitch P and etched waferalignment marks suitable for use at 0° (not shown). Etched alignmentattributes could have been produced by either a series of static ordynamic exposures; we do not need to know which machine or other detailsof its exposure method, we will assess the site by site placement errorin this etched archive wafer. We now coat the archive wafer withphotoresist, place it in a stepper or scanner, M′ (not shown), and carryout the exposure steps, for example as described in U.S. patentapplication Ser. No. 10/775,718, supra.

Reticle CR is now exposed in static mode in an interlocking array thatcovers the archive wafer (not shown) and covers each etched alignmentattribute of the archive wafer with a complementary alignment attribute(CAA) from the COLG of CR thus forming a series of completed alignmentattribute archives (COAAAR) of which four are shown in FIG. 51.Additionally, adjacent exposures of CR create completed alignmentattributes, calibration (COAAC) of which ten are present in FIG. 51.There is additionally an unusable completed alignment attribute, UA,present in most exposures that is not used.

Moving to Block 1006, we now measure all COAAC and COAAAR completedalignment attributes. In Block 1007, we follow, for example, U.S. patentapplication Ser. No. 10/775,718, supra in providing the manufacturingerror file for calibration reticle CR and possibly the static fielddistortion error of machine M′ (machine doing the CR exposure).

In Block 1008, we follow, for example, U.S. Publication No.2004-0162687, supra in reconstructing the locations of the complementaryalignment attributes making up the COAAAR that span the archive wafer.Calling this (DX, DY) (COAAAR, XW, YW) the archive wafer calibrationoffsets are then computed as:(DX, DY)(AW, XW, YW)=(BBX, BBY)(COAAAR, XW, YW)+(DX, DY)(COAAAR, XW,YW)  (Eq 27)where;

(BBX, BBY) (COAAAR, XW, YW)=overlay measurement from the etched archivewafer alignment attribute at position XW, YW on the wafer.

At this point (Block 1008) we strip the archive wafer of photoresist andcreate the calibration file associated with the wafer, FIG. 47.

FOURTH EMBODIMENT OF CALIBRATION TECHNIQUE

This is ITECH=4 of Table 1. This is a variation of the second embodimentwherein instead of shooting calibration reticle CR of FIG. 48 in staticmode on a stepper or scanner, it is shot in dynamic mode on a scanner.The discussion is largely the same so we discuss differences here only.

First, and referring to FIG. 48, calibration reticle CR could be of thepartially transmitting type (for example only 5% transmitting) asdiscussed in, for example, U.S. Pat. No. 6,734,971, supra and shown inFIG. 14 therein. The reason for using a partially transmitting reticleis so that when doing the calibration exposures (Block 1005) in dynamicmode on a scanner, what would previously have been a single exposure (ormore exactly one of many single exposures) is now carried out asmultiple sub-E0, or sub-nominal dose, exposures. Multiple (for example,more than approximately 30) sub-E0 exposures have the cumulative effectof averaging out the non-repeatable portion of the reticle to waferstage scan synchronization error so that what remains is the repeatablepart of the scan synchronization error plus the dynamic lens distortion.

The next difference from the second embodiment is data, regardingmachine M′ intrafield distortion (Block 1007). Instead of providing thestatic lens distortion for M′ ((DX, DY) (SL, XF, YF)) we provide therepeatable part of the dynamic intrafield distortion:(DX,DY)(RIF, XF, YF)=(DX,DY)(DL, XF)+(DX,DY)(RSS, XF, YF)  (Eq 28)where;

(DX,DY) (RIF, XF, YF)=repeatable part of the dynamic intrafielddistortion at intrafield point XF, YF

(DX, DY) (DL, XF)=dynamic lens intrafield distortion, and the repeatablepart of the scan synchronization error is(DX, DY)(RSS, XF, YF)=(tx(YF), ty(YF)+XF*θ(YF))  (Eq 29)where;

(tx, ty, θ) (YF)=repeatable part of the x-translation, y-translation,Yaw of the scan synchronization error.

The dynamic lens distortion, (DX,DY) (DL,XF), may be measured using thetechnique of , U.S. Pat. No. 6,906,780, supra while the repeatable partof the scan synchronization error may be measured using the techniqueof, U.S. Pat. No. 6,906,303, supra. Other techniques may also be used tomeasure the dynamic lens distortion and synchronization error. At thispoint, we provide the repeatable part of the dynamic intrafielddistortion as input to an algorithm, see, for example, U.S. Pat. No.6,734,971, supra and the remaining steps for this fourth embodiment arethen similar to the second embodiment.

FIFTH EMBODIMENT OF CALIBRATION TECHNIQUE

This is ITECH=5 of Table 1. This is an improvement of the secondembodiment that accounts for wafer height and stage height variationinfluence on transverse placement of the calibration exposures. It usesthe method described in U.S. patent application Ser. No. 11/676,959entitled “Systems And Methods For Determination Of Focus AndTelecentricity, Amelioration Of Metrology Induced Effects AndApplication To Determination Of Precision Bossung Curves”, which isherein incorporated by reference.

FIG. 52 shows in plan view calibration reticle CR (Block 1004) used. Itstransverse calibration structures are identical to those of CR in FIG.48 but it also has integrated z-height mapping structures as describedin see, for example, A. Smith et al., “Method and Apparatus forMeasurement of Exit Pupil Telecentricity and Source Boresighting”, U.S.Publication No. 2006-0164618, specifically backside reticle shroud SH,and alignment attributes (dotted inner boxes as drawn in FIG. 52) forz-mapping ZIR, ZIT, ZIL, ZIB, and ZIC. ZIR, ZIT, ZIL, ZIB are locatedapproximately underneath shroud boundary, SHB (shown also in crosssection in FIG. 53) while ZIC and the transverse calibration structuresare located so that shroud SH in no way occludes light incident frommachine M′ illumination source (not shown). Additionally, there is az-reference group, ZREF, shown in plan view in FIG. 54. It is eitherlocated on CR, off to one side and so that shroud SH does not occludeit, or possibly on a separate reticle altogether.

Moving to Block 1005, exposure steps are the same as in the secondembodiment except that there is now the additional exposure sequence ofblading down to the ZREF pattern of FIG. 54 and stepping/exposing it ateach COAAAR or COAAC printed on archive wafer AW (see FIG. 49). FIG. 55shows completed alignment attribute, archive (COAAAR 1/140) from FIG. 49as it and its associated z-mapping structures would appear on archivewafers of the present embodiment. Five additional completed alignmentattributes consisting of the pairs ZIC/ZOC, ZIR/ZOR, ZIT/ZOT, ZIL/ZOL,ZIB/ZOB go along with COAAAR and are used to reconstruct the z-height.

In Block 1006, in addition to the overlay measurements of the secondembodiment, we also measure the five additional z-marks that go withevery calibration or archive measurement of the second embodiment.

Moving to Block 1007, the enhanced accuracy of this method derives fromtaking into account the combined effect of non-telecentricity (sourceand exit pupil), lens aberrations, and focus variations (mostly fromwafer height variations). Source, exit pupil, and lens aberrations areprovided by the user most readily in the framework set forth in see, forexample, A. Smith et al., “Method of Emulation of LithographicProjection Tools”, U.S. Publication No. 2005-0240895. These, in additionto the static lens distortion (supra) are provided.

In Block 1008, we compute the calibration file in view of the additionalinformation provided by the z-height fiducials. At each COAAAR or COAACwe reconstruct the z-height (Z(XW, YW)) from the five z-height overlaymeasurements at each side using the method in U.S. patent applicationSer. No. 11/676,959 entitled “Systems And Methods For Determination OfFocus And Telecentricity, Amelioration Of Metrology Induced Effects AndApplication To Determination Of Precision Bossung Curves”. Now knowingthe z heights, aberrations, source and exit pupil telecentricity, we cancalculate the additional resulting transverse shifts (Dx, Dy) at eachCOAAAR or COAAC location and utilize them as corrections applied inaddition to the static lens distortion data already provided. Thecalculations then proceed as in the second embodiment and at the end westrip the archive wafer of photoresist and create the unique calibrationfile associated with that wafer, FIG. 47.

ADDITIONAL EMBODIMENTS

In one class of embodiments the archive wafer is already provided;indeed it is likely an archive wafer that is already being used inroutine machine calibration and it is likely that a calibration orimproved calibration file is required. In this case, the process flow ofFIG. 56 has as its first step (Block 20001) providing a previouslypatterned archive wafer. We are not concerned with the means, or mannerin which it was produced, only that there be permanent alignmentattributes on some pitch P. The archive wafer being thus provided, weproceed to carry out the steps of Blocks 20002-20006 which are similarto Blocks 1004-1008 of FIG. 37.

In another class of embodiments, archive wafer AW may not have permanentalignment attributes on pitch P that cover the entire wafer (i.e.,missing sites). AW can still be calibrated by the method of thisinvention by carrying out the steps of FIG. 37 or FIG. 56 and at archivewafer sites that are missing the permanent alignment attributes, noentry in final archive wafer calibration file (FIG. 47) is made.

In yet another class of embodiments, we may want to calibrate an archivewafer that is a mixture of overlay alignment attributes and waferalignment marks (see, for example, M. van den Brink et al. “Matching ofMultiple Wafer Steppers for 0.35 micron Lithography Using AdvancedOptimization Schemes”, Proc. of SPIE, Vol. 1926, pp. 188-207, 1993). Inthis case the only prerequisite for the archive wafer is that theoverlay alignment attributes lie on an incomplete grid of regular pitchP and be proximate to (i.e., within the isoplanatic patch of the machinethat printed the archive wafer) the wafer alignment marks. Then theincomplete grid calibration method (supra) can be applied.

The above specific examples have utilized a round or notchedsemiconductor wafer. It is understood the technique also applies toarchive media that are rectangular substrates (i.e., flat panels,printed circuit boards, circuit modules, reticles) or any other planarsubstrate. The substrate could also be a CCD array we wish to calibrate,and in that case, the physical CCD pixels take the place of the etchedarchive wafer alignment attributes and the calibration reticle exposureswill be the same as above. Now, instead of overlay data (BBX, BBY), wewill directly read out the position of the complementary alignmentattributes and utilize them in the calculation of the pixel positionswithin the CCD array.

Heretofore we have referred to etched alignment attributes in thearchive wafer. Any permanent, durable mark, etched, raised, embossed, orpossibly drawn serving as the alignment attribute is all that isrequired for the practice of this invention.

The machine on which the reference wafer is loaded may be differenttypes of imaging tools. For example, the machine may be a stepperprojection imaging tool, a scanner projection imaging tool, an electronbeam imaging system, an electron beam direct write system, a SCAPELtool, an extreme ultra-violet imaging apparatus, an ion projectionlithography tool, or an x-ray imaging system. Also, the subtraction ofthe calibration file and the calculation of the inter-field orintra-field errors may be preformed on a computer or a controller. Inaddition, the calibration file may be stored on a computer readablemedium, for example, a tape, a diskette, or a CD.

The foregoing description details certain embodiments of the invention.It will be appreciated, however, that no matter how detailed theforegoing appears, the invention may be embodied in other specific formswithout departing from its spirit or essential characteristics. Thedescribed embodiments are to be considered in all respects only asillustrative and not restrictive and the scope of the invention is,therefore, indicated by the appended claims rather than by the foregoingdescription. All changes which come with the meaning and range ofequivalency of the claims are to be embraced within their scope.

1. A reticle for use in constructing a calibration file for an archivemedia; the reticle comprising a pattern of complementary alignmentattributes that are exposed onto an archive media such that the patternof complementary alignment attributes overlay and interlock with aetched alignment attributes on the archive thereby forming completedalignment attributes, wherein measurements of offsets in the completedalignment attributes are used to construct a calibration file for thearchive media based upon the offset measurements and dynamic intrafieldlens distortion data of a lens used to expose the pattern ofcomplementary alignment attributes, and calibration error of thecomplementary alignment attributes.
 2. A calibration reticle for use inconstructing a calibration file for an archive media; the calibrationreticle comprising a pattern exposed onto an archive media, wherein thepattern of the calibration reticle includes complementary alignmentattributes, and the reticle is positioned such that the pattern ofcomplementary alignment attributes overlay and interlock etchedalignment attributes on the archive media, thereby forming interlockingrows and columns of completed alignment attributes between adjacentstatic calibration reticle exposure fields, wherein measurements ofoffsets in the completed alignment attributes are used to construct acalibration file for the archive media based upon the offsetmeasurements and intrafield lens distortion data of a lens used toexpose the pattern of complementary alignment attributes, andmanufacturing error data for the calibration reticle.